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Limited By:	Author = Ansari, Lida;

Displaying Results 1 - 12 of 12 on page 1 of 1

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A sub k(B)T/q semimetal nanowire field effect transistor (2016)

Ansari, Lida; Fagas, Georgios; Gity, Farzan; Greer, James C.

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Doping of ultra-thin Si films: Combined first-principles calculations and experimental study (2021)

Gity, Farzan; Meaney, Fintan; Curran, Anya; Hurley, Paul K.; Fahy, Stephen; Duffy, Ray;...

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Electronic and structural properties of rhombohedral [1 1 1] and [1 1 0] oriented ultra-thin bismuth nanowires (2016)

Ansari, Lida; Gity, Farzan; Greer, James C.

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Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5nm (2019)

MacHale, John; Meaney, Fintan; Kennedy, Fintan; Eaton, Luke; Mirabelli, Gioele; White, ...

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Metal-semimetal Schottky diode relying on quantum confinement (2018)

Gity, Farzan; Ansari, Lida; König, Christian; Verni, Giuseppe Alessio; Holmes, Justin D...

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Properties of homo- and hetero-Schottky junctions from first principle calculations (2018)

Greer, James C.; Blom, Anders; Ansari, Lida

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Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C (2019)

Ansari, Lida; Monaghan, Scott; McEvoy, Niall; Ó Coileáin, Cormac; Cullen, Conor P.; Lin...

Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C (2019)

Ansari, Lida; Monaghan, Scott; McEvoy, Niall; Ó Coileáin, Cormac; Cullen, Conor P.; Lin, Jun; Siris, Rita; Stimpel-Lindner, Tanja; Burke, Kevin F.; Mirabelli, Gioele; Duffy, Ray; Caruso, Enrico; Nagle, Roger E.; Duesberg, Georg S.; Hurley, Paul K.; Gity, Farzan

Abstract:

In this work, we present a comprehensive theoretical and experimental study of quantum confinement in layered platinum diselenide (PtSe2) films as a function of film thickness. Our electrical measurements, in combination with density functional theory calculations, show distinct layer-dependent semimetal-to-semiconductor evolution in PtSe2 films, and highlight the importance of including van der Waals interactions, Green’s function calibration, and screened Coulomb interactions in the determination of the thickness-dependent PtSe2 energy gap. Large-area PtSe2 films of varying thickness (2.5–6.5 nm) were formed at 400 °C by thermally assisted conversion of ultra-thin platinum films on Si/SiO2 substrates. The PtSe2 films exhibit p-type semiconducting behavior with hole mobility values up to 13 cm2/V·s. Metal-oxide-semiconductor field-effect transistors have been fabricated using the grown PtSe2 films and a gate field-controlled switching performance with an ION/IOFF ratio of >230 h...