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Limited By: Author = Bilousov, Oleksandr V.;
7 items found
 
Displaying Results 1 - 7 of 7 on page 1 of 1
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Epitaxial growth of (0001) oriented porous GaN layers by chemical vapour deposition (2014)
Bilousov, Oleksandr V.; Carvajal, Joan J.; Mena, Josue; Martinez, Oscar; Jimenez, Juan;...
University College Cork
Journal article
peer-reviewed
Mark
Fabrication of p-type porous GaN on silicon and epitaxial GaN (2013)
Bilousov, Oleksandr V.; Geaney, Hugh; Carvajal, Joan J.; Zubialevich, Vitaly Z.; Parbro...
University College Cork
Journal article
peer-reviewed
Science Foundation Ireland
Mark
Fully porous GaN p-n junctions fabricated by chemical vapor deposition: a green technology towards more efficient LEDs (2015)
Carvajal, Joan J.; Mena, Josue; Bilousov, Oleksandr V.; Martínez, Oscar; Jiménez, Juan ...
University College Cork
Journal article
peer-reviewed
Mark
Fully porous GaN p-n junctions fabricated by chemical vapor deposition. (2014)
Bilousov, Oleksandr V.; Carvajal, Joan J.; Geaney, Hugh; Zubialevich, Vitaly Z.; Parbro...
University College Cork
Journal article
peer-reviewed
Mark
Metal catalyzed porous n-type GaN layers: low resistivity ohmic contacting and single-step MgO/GaN diode formation (2013)
Bilousov, Oleksandr V.; Carvajal, Joan J.; Drouin, Dominique; Vilalta, A.; Ruterana, P....
University College Cork
Journal article
peer-reviewed
Science Foundation Ireland
Mark
Porous GaN and high-k MgO-GaN MOS diode layers grown in a single step on silicon (2014)
Bilousov, Oleksandr V.; Carvajal, Joan J.; Vilalta-Clemente, A.; Ruterana, P.; Diaz, Fr...
University College Cork
Journal article
peer-reviewed
Mark
Reduced workfunction intermetallic seed layers allow growth of porous n-GaN and low resistivity, ohmic electron transport (2012)
Bilousov, Oleksandr V.; Carvajal, Joan J.; Drouin, Dominique; Mateos, Xavier; Diaz, Fra...
University College Cork
Journal article
peer-reviewed
Science Foundation Ireland
Higher Education Authority
Displaying Results 1 - 7 of 7 on page 1 of 1
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