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Limited By: Subject = III-V semiconductors;
100 items found
 
Displaying Results 26 - 50 of 100 on page 2 of 4
Mark
Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots (2014)
Gauthier, J. P.; Robert, Cedric; Almosni, S.; Leger, Y.; Perrin, M.; Even, J.; Balocchi...
University College Cork
Journal article
peer-reviewed
Mark
University College Cork
Journal article
peer-reviewed
Science Foundation Ireland
Mark
Electrical and physical characterization of the Al2O3/p-GaSb interface for 1%, 5%, 10%, and 22% (NH4)(2)S surface treatments (2014)
Peralagu, Uthayasankaran; Povey, Ian M.; Carolan, Patrick B.; Lin, Jun; Contreras-Guerr...
University College Cork
Journal article
peer-reviewed
Mark
Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices (2013)
Thoma, Jiri; Liang, Baolai; Reyner, Charles; Ochalski, Tomasz J.; Williams, David P.; H...
University College Cork
Journal article
peer-reviewed
Science Foundation Ireland
Mark
Electro-optical and lasing properties of hybrid quantum dot/quantum well material system for reconfigurable photonic devices (2013)
Thoma, Jiri; Liang, Baolai; Lewis, Liam; Hegarty, Stephen P.; Huyet, Guillaume; Huffake...
University College Cork
Journal article
peer-reviewed
Science Foundation Ireland
Mark
Electroless nickel/gold Ohmic contacts to p-type GaN (2008)
Lewis, Liam; Casey, Declan P.; Jeyaseelan, Arockia Vimal; Rohan, James F.; Maaskant, Pl...
University College Cork
Journal article
peer-reviewed
Enterprise Ireland
Mark
Electron and hole dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers (2007)
O'Driscoll, Ian; Piwonski, Tomasz; Schleussner, C.F.; Houlihan, John; Huyet, Guill...
University College Cork
Journal article
peer-reviewed
Science Foundation Ireland
Higher Education Authority
Mark
Electron band alignment between (100)InP and atomic-layer deposited Al2O3 (2010)
Chou, Hsing-Yi; Afanas'ev, V. V.; Stesmans, A.; Lin, H. C.; Hurley, Paul K.; Newco...
University College Cork
Journal article
peer-reviewed
Science Foundation Ireland
Mark
Energies of the X- and L-valleys in In0.53Ga0.47As from electronic structure calculations (2016)
Greene-Diniz, Gabriel; Fischetti, Massimo V.; Greer, James C.
University College Cork
Journal article
peer-reviewed
Mark
Energy barriers at interfaces between (100) InxGa1-xAs (0 <= x <= 0.53) and atomic-layer deposited Al2O3 and HfO2 (2009)
Afanas'ev, V. V.; Stesmans, A.; Brammertz, G.; Delabie, A.; Sionke, S.; O'Mah...
University College Cork
Journal article
peer-reviewed
Science Foundation Ireland
Mark
Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2 (2008)
Afanas'ev, V. V.; Badylevich, M.; Stesmans, A.; Brammertz, G.; Delabie, A.; Sionke...
University College Cork
Journal article
peer-reviewed
Mark
Excitation-induced energy shifts in the optical gain spectra of InN quantum dots (2009)
Lorke, M.; Seebeck, J.; Gartner, P.; Jahnke, F.; Schulz, Stefan
University College Cork
Journal article
peer-reviewed
Mark
Exciton localization in semipolar ( 112¯2) InGaN multiple quantum wells (2016)
Dinh, Duc V.; Brunner, Frank; Weyers, Markus; Corbett, Brian M.; Parbrook, Peter J.
University College Cork
Journal article
peer-reviewed
Higher Education Authority
Mark
Exciton-phonon coupling in single quantum dots with different barriers (2011)
Dufaker, D.; Mereni, Lorenzo O.; Karlsson, K. F.; Dimastrodonato, Valeria; Juska, Gedim...
University College Cork
Journal article
peer-reviewed
Science Foundation Ireland
Higher Education Authority
Mark
Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk (2017)
Lebedev, D. V.; Kulagina, M. M.; Troshkov, S. I.; Vlasov, A. S.; Davydov, V. Y.; Smirno...
University College Cork
Journal article
peer-reviewed
Science Foundation Ireland
Mark
University College Cork
Journal article
peer-reviewed
Mark
Fabrication of p-type porous GaN on silicon and epitaxial GaN (2013)
Bilousov, Oleksandr V.; Geaney, Hugh; Carvajal, Joan J.; Zubialevich, Vitaly Z.; Parbro...
University College Cork
Journal article
peer-reviewed
Science Foundation Ireland
Mark
First principles modeling of defects in the Al2O3/In0.53Ga0.47As system (2017)
Greene-Diniz, Gabriel; Kuhn, Kelin J.; Hurley, Paul K.; Greer, James C.
University College Cork
Journal article
peer-reviewed
Science Foundation Ireland
Mark
Growth process, characterization, and modeling of electronic properties of coupled InAsSbP nanostructures (2011)
Marquardt, Oliver; Hickel, Tilmann; Neugebauer, Joerg; Gambaryan, Karen M.; Aroutiounia...
University College Cork
Journal article
peer-reviewed
Mark
High injection and carrier pile-up in lattice matched InGaAs/InP PN diodes for thermophotovoltaic applications (2004)
Ginige, Ravin; Cherkaoui, Karim; Kwan, V. W.; Kelleher, Carmel; Corbett, Brian M.
University College Cork
Journal article
peer-reviewed
Higher Education Authority
Mark
University College Cork
Other
peer-reviewed
Mark
University College Cork
Journal article
peer-reviewed
Science Foundation Ireland
Mark
University College Cork
Journal article
peer-reviewed
Science Foundation Ireland
Mark
University College Cork
Journal article
peer-reviewed
Higher Education Authority
Science Foundation Ireland
Mark
Improved room-temperature luminescence of core-shell InGaAs/GaAs nanopillars via lattice-matched passivation (2016)
Komolibus, Katarzyna; Scofield, Adam C.; Gradkowski, Kamil; Ochalski, Tomasz J.; Kim, H...
University College Cork
Journal article
peer-reviewed
Science Foundation Ireland
Displaying Results 26 - 50 of 100 on page 2 of 4
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