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Subject = Schottky junction;
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Displaying Results 1 - 2 of 2 on page 1 of 1
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Metal-semimetal Schottky diode relying on quantum confinement
(2018)
Gity, Farzan; Ansari, Lida; König, Christian; Verni, Giuseppe Alessio; Holmes, Justin D...
Metal-semimetal Schottky diode relying on quantum confinement
(2018)
Gity, Farzan; Ansari, Lida; König, Christian; Verni, Giuseppe Alessio; Holmes, Justin D.; Long, Brenda; Lanius, Martin; Schüffelgen, Peter; Mussler, Gregor; Grützmacher, Detlev; Greer, James C.
Abstract:
Quantum confinement in a semimetal thin film such as bismuth (Bi) can lead to a semimetal-to-semiconductor transition which allows for the use of semimetals as semiconductors when patterned at nanoscale lengths. Bi native oxide on Bi thin film grown by molecular beam epitaxy (MBE) is investigated using X-ray photoelectron spectroscopy (XPS) to measure the elemental composition of the oxide. Also, an in-situ argon plasma etch step is developed allowing for the direct coating of the surface of thin Bi films by a metal contact to form a Schottky junction. Model structures of rhombohedral [111] and [110] bismuth thin films are found from density functional theory (DFT) calculations. The electronic structure of the model thin films is investigated using a GW correction and the formation of an energy band gap due to quantum confinement is found. Electrical characterization of the fabricated Bi-metal Schottky diode confirms a band gap opening in Bi thin film for a film thickness of approxi...
http://hdl.handle.net/10468/5725
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Properties of homo- and hetero-Schottky junctions from first principle calculations
(2018)
Greer, James C.; Blom, Anders; Ansari, Lida
Properties of homo- and hetero-Schottky junctions from first principle calculations
(2018)
Greer, James C.; Blom, Anders; Ansari, Lida
Abstract:
Electronic structure calculations for a homo-material semimetal (thick Sn)/semiconductor (thin Sn) heterodimensional junction and two conventional metal (Ag or Pt)/silicon hetero-material junctions are performed. Charge distributions and local density of states are examined to compare the physics of junctions formed by quantum confinement in a homo-material, heterodimensional semimetal junction with that of conventional Schottky hetero-material junctions. Relative contributions to the Schottky barrier heights are described in terms of the interface dipoles arising due to charge transfer at the interface and the effects of metal induced gap states extending into the semiconducting regions. Although the importance of these physical mechanisms vary for the three junctions, a single framework describing the junction energetics captures the behaviors of both the heterodimensional semimetal junction and the more conventional metal/semiconductor junctions.
http://hdl.handle.net/10468/9658
Displaying Results 1 - 2 of 2 on page 1 of 1
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