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Limited By:	Subject = Semiconductor junctions;

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Displaying Results 1 - 4 of 4 on page 1 of 1

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Fully porous GaN p-n junctions fabricated by chemical vapor deposition: a green technology towards more efficient LEDs (2015)

Carvajal, Joan J.; Mena, Josue; Bilousov, Oleksandr V.; Martínez, Oscar; Jiménez, Juan ...

Fully porous GaN p-n junctions fabricated by chemical vapor deposition: a green technology towards more efficient LEDs (2015)

Carvajal, Joan J.; Mena, Josue; Bilousov, Oleksandr V.; Martínez, Oscar; Jiménez, Juan J.; Zubialevich, Vitaly Z.; Parbrook, Peter J.; Geaney, Hugh; O'Dwyer, Colm; Diaz, Francesc; Aguilo, Magdalena

Abstract:

Porous GaN based LEDs produced by corrosion etching techniques have demonstrated enhanced light extraction efficiencies in the past. However, these fabrication techniques require further post-growth processing steps, which increase the price of the final device. In this paper, we review the process we developed for the formation of fully porous GaN p-n junctions directly during growth, using a sequential chemical vapor deposition (CVD) process to produce the different layers that form the p-n junction.

http://hdl.handle.net/10468/6692

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Junctionless multigate field-effect transistor (2009)

Lee, Chi-Woo; Afzalian, Aryan; Akhavan, Nima Dehdashti; Yan, Ran; Ferain, Isabelle; Col...

Junctionless multigate field-effect transistor (2009)

Lee, Chi-Woo; Afzalian, Aryan; Akhavan, Nima Dehdashti; Yan, Ran; Ferain, Isabelle; Colinge, Jean-Pierre

Abstract:

This paper describes a metal-oxide-semiconductor (MOS) transistor concept in which there are no junctions. The channel doping is equal in concentration and type to the source and drain extension doping. The proposed device is a thin and narrow multigate field-effect transistor, which can be fully depleted and turned off by the gate. Since this device has no junctions, it has simpler fabrication process, less variability, and better electrical properties than classical MOS devices with source and drain PN junctions. (C) 2009 American Institute of Physics. (DOI: 10.1063/1.3079411)

http://hdl.handle.net/10468/4364

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Properties of homo- and hetero-Schottky junctions from first principle calculations (2018)

Greer, James C.; Blom, Anders; Ansari, Lida

Properties of homo- and hetero-Schottky junctions from first principle calculations (2018)

Greer, James C.; Blom, Anders; Ansari, Lida

Abstract:

Electronic structure calculations for a homo-material semimetal (thick Sn)/semiconductor (thin Sn) heterodimensional junction and two conventional metal (Ag or Pt)/silicon hetero-material junctions are performed. Charge distributions and local density of states are examined to compare the physics of junctions formed by quantum confinement in a homo-material, heterodimensional semimetal junction with that of conventional Schottky hetero-material junctions. Relative contributions to the Schottky barrier heights are described in terms of the interface dipoles arising due to charge transfer at the interface and the effects of metal induced gap states extending into the semiconducting regions. Although the importance of these physical mechanisms vary for the three junctions, a single framework describing the junction energetics captures the behaviors of both the heterodimensional semimetal junction and the more conventional metal/semiconductor junctions.

http://hdl.handle.net/10468/9658

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Semiconductor nanostructures for antireflection coatings, transparent contacts, junctionless thermoelectrics and Li-ion batteries (2013)

Glynn, Colm; Osiak, Michal J.; McSweeney, William; Lotty, Olan; Jones, Kim; Geaney, Hug...

Semiconductor nanostructures for antireflection coatings, transparent contacts, junctionless thermoelectrics and Li-ion batteries (2013)

Glynn, Colm; Osiak, Michal J.; McSweeney, William; Lotty, Olan; Jones, Kim; Geaney, Hugh; Quiroga-Gonzalez, Enrique; Holmes, Justin D.; O'Dwyer, Colm

Abstract:

Porous semiconductors structured top-down by electrochemical means, and from bottom-up growth of arrays and arrangements of nanoscale structures, are shown to be amenable to a range of useful thermal, optical, electrical and electrochemical properties. This paper summarises recent investigations of the electrochemical, electrical, optical, thermal and structural properties of porous semiconductors such as Si, In2O3, SnO2 and ITO, and dispersions, arrays and arrangements of nanoscale structures of each of these materials. We summarize the property-inspired application of such structurally engineered arrangements and morphologies of these materials for antireflection coatings, broadband absorbers, transparent contacts to LEDs that improve transmission, electrical contact and external quantum efficiency. Additionally the possibility of thermoelectric performance through structure-mediated variation in thermal resistance and phonon scattering without a p-n junction is shown through phon...

http://hdl.handle.net/10468/6136

Displaying Results 1 - 4 of 4 on page 1 of 1