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"A single nanoscale junction with programmable multilevel memory"
BOLAND, JOHN; O'Kelly, Curtis; Fairfield, J.A.
Nanoscale devices that are sensitive to measurement history enable memory applications, and memristors are currently under intense investigation for robustness and functionality. Here we de-scribe the fabrication and performance of a memristor-like device that is comprised of a single TiO2 nan-owire in contact with Au electrodes, demonstrating both high sensitivity to electrical stimuli and high levels of control. Through an electroforming process, a population of charged dopants is created at the interface between the wire and electrode that can be manipulated to demonstrate a range of device and memristor characteristics. In contrast to conventional two-terminal memristors, our device is essentially a diode that exhibits memristance in the forward bias direction. The device is easily reset to the off state by a single voltage pulse and can be incremented to provide a range of controllable conductance states in the forward direction. Electrochemical modification of the Schottky barrier at the electrodes is proposed as an underlying mechanism, and six-level memory operations are demonstrated on a single nanowire.
Keyword(s): Memristors; Nanoscale devices; Nanowires; Memristance; Nanoscience & Materials
Publication Date:
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: Trinity College Dublin
Citation(s): O'Kelly, C. Fairfield, J.A. Boland, J.J., "A single nanoscale junction with programmable multilevel memory", ACS Nano, 8, (11), 2014, p11724 - 11729
First Indexed: 2016-04-16 05:10:45 Last Updated: 2016-04-16 05:10:45