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Blowing of polycrystalline silicon fuses
Lee, William T.; Fowler, Andrew C.; Power, O.; Healy, S.; Browne, J.
Polycrystalline silicon fuses are one time programmable memory elements which allow the calibration of integrated circuits at wafer and package level. We present a zero-dimensional lumped parameter model of the programming of fuses made from a combination of tungsten silicide and polycrystalline silicon. The components of the model are an electrical model, a thermal model, and a flow model. The model generates quantitatively accurate results and reproduces trends with applied voltage and fuse size. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3457469] PUBLISHED peer-reviewed
Keyword(s): charge injection; diffraction; electrodes; gold; organic semiconductors; point contacts; thin film transistors
Publication Date:
2010
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: University of Limerick
Funder(s): Science Foundation Ireland
Citation(s): Applied Physics;97, 023502
http://dx.doi.org/10.1063/1.3457469
06/MI/005
Publisher(s): American Institute of Physics
First Indexed: 2016-04-28 05:27:06 Last Updated: 2018-07-12 06:33:26