Institutions | About Us | Help | Gaeilge
rian logo


Mark
Go Back
Mechanism that dictates pore width and <111>a pore propagation in InP
Lynch, Robert P.; Quill, Nathan; O'Dwyer, Colm; Nakahara, Shohei; Buckley, D. Noel
We report a mechanism for pore growth and propagation based on a three-step charge transfer model. The study is supported by electron microscopy analysis of highly doped n-InP samples anodised in aqueous KOH. The model and experimental data are used to explain propagation of pores of characteristic diameter preferentially along the <111>A directions. We also show evidence for deviation of pore growth from the <111>A directions and explain why such deviations should occur. The model is self-consistent and predicts how carrier concentration affects the internal dimensions of the porous structures.
Keyword(s): Nanotechnology; Electrochemical properties; Charge transfer model; Electron microscopy analysis; InP; Internal dimensions; Pore growth; Pore width; Porous structures
Publication Date:
2012
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: University College Cork
Funder(s): Irish Research Council for Science Engineering and Technology
Citation(s): Lynch, R. P., Quill, N., O'Dwyer, C., Nakahara, S. and Buckley, D. N. (2012) 'Mechanism that dictates pore width and <111>a pore propagation in InP'. ECS Transactions, 50(6), pp. 319-334. http://ecst.ecsdl.org/content/50/6/319.abstract
Publisher(s): Electrochemical Society
File Format(s): application/pdf
Related Link(s): http://ecst.ecsdl.org/content/50/6
First Indexed: 2016-07-13 05:37:33 Last Updated: 2016-10-14 06:29:22