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Fabrication of p-type porous GaN on silicon and epitaxial GaN
Bilousov, Oleksandr V.; Geaney, Hugh; Carvajal, Joan J.; Zubialevich, Vitaly Z.; Parbrook, Peter J.; Giguere, A.; Drouin, Dominique; Diaz, Francesc; Aguilo, Magdalena; O'Dwyer, Colm
Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN films on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous GaN. Electrical measurements for p-type GaN on Si show Ohmic and Schottky behavior from gold and platinum seeded GaN, respectively. Ohmicity is attributed to the formation of a Ga2Au intermetallic. Porous p-type GaN was also achieved on epitaxial n-GaN on sapphire, and transport measurements confirm a p-n junction commensurate with a doping density of similar to 10(18) cm(-3). Photoluminescence and cathodoluminescence confirm emission from Mg-acceptors in porous p-type GaN. (C) 2013 AIP Publishing LLC.
Keyword(s): Chemical-vapor-deposition; Mg-doped gan; yellow luminescence; Gallium nitride; Photoluminescence; Particles; Nanowires; Vacancies; Growth; Films; III-V semiconductors; Epitaxy; Gold; Magnesium; Doping
Publication Date:
2013
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: University College Cork
Funder(s): Science Foundation Ireland
Citation(s): Bilousov, O. V., Geaney, H., Carvajal, J. J., Zubialevich, V. Z., Parbrook, P. J., Giguère, A., Drouin, D., Díaz, F., Aguiló, M. and O'Dwyer, C. (2013) 'Fabrication of p-type porous GaN on silicon and epitaxial GaN', Applied Physics Letters, 103(11), pp. 112103. doi: 10.1063/1.4821191
Publisher(s): AIP Publishing
File Format(s): application/pdf
Related Link(s): http://aip.scitation.org/doi/abs/10.1063/1.4821191
First Indexed: 2017-09-06 06:39:12 Last Updated: 2019-06-15 06:42:04