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Carrier localization and in-situ annealing effect on quaternary Ga1-xInxAsySb1-y/GaAs quantum wells grown by Sb pre-deposition
Thoma, Jiri; Liang, Baolai; Lewis, Liam; Hegarty, Stephen P.; Huyet, Guillaume; Huffaker, Diana L.
Using temperature-dependent photoluminescence spectroscopy, we have investigated and compared intrinsic InGaAs, intrinsic GaInAsSb, and p-i-n junction GaInAsSb quantum wells (QWs) embedded in GaAs barriers. Strong carrier localization inside the intrinsic GaInAsSb/GaAs QW has been observed together with its decrease inside the p-i-n sample. This is attributed to the effect of an in-situ annealing during the top p-doped AlGaAs layer growth at an elevated temperature of 580 degrees C, leading to Sb-atom diffusion and even atomic redistribution. High-resolution X-ray diffraction measurements and the decrease of both maximum localization energy and full delocalization temperature in the p-i-n QW sample further corroborated this conclusion. (C) 2013 American Institute of Physics. (http://dx.doi.org/10.1063/1.4795866)
Keyword(s): Molecular-beam epitaxy; Optical-properties; Threshold-current; Band-gap; Lasers; Gainnas; Performance; Surfactant; Quantum wells; III-V semiconductors; Photoluminescence; Annealing; Cladding
Publication Date:
2013
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: University College Cork
Funder(s): Science Foundation Ireland
Citation(s): Thoma, J., Liang, B., Lewis, L., Hegarty, S. P., Huyet, G. and Huffaker, D. L. (2013) 'Carrier localization and in-situ annealing effect on quaternary Ga1−xInxAsySb1−y/GaAs quantum wells grown by Sb pre-deposition', Applied Physics Letters, 102(11), pp. 113101. doi: 10.1063/1.4795866
Publisher(s): AIP Publishing
File Format(s): application/pdf
Related Link(s): http://aip.scitation.org/doi/abs/10.1063/1.4795866
First Indexed: 2017-09-06 06:39:14 Last Updated: 2017-09-06 06:39:14