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Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots
Pavarelli, Nicola; Ochalski, Tomasz J.; Liu, H. Y.; Gradkowski, Kamil; Schmidt, Michael; Williams, David P.; Mowbray, D. J.; Huyet, Guillaume
The optical properties of InAs/GaAs quantum dots capped with a GaAsSb quantum well are investigated by means of power-dependent and time-resolved photoluminescence. The structure exhibits the coexistence of a type-I ground state and few type-II excited states, the latter characterized by a simultaneous carrier density shift of the peak position and wavelength-dependent carrier lifetimes. Complex emission dynamics are observed under a high-power excitation regime, with the different states undergoing shifts during specific phases of the measurement. These features are satisfactorily explained in terms of band structure and energy level modifications induced by two competitive carrier interactions inside the structure. (C) 2012 American Institute of Physics. (
Keyword(s): Light-emission; Layer; Quantum dots; Quantum wells; III-V semiconductors; Photoluminescence; Electrons
Publication Date:
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: University College Cork
Funder(s): Science Foundation Ireland; Enterprise Ireland; Higher Education Authority
Citation(s): Pavarelli, N., Ochalski, T. J., Liu, H. Y., Gradkowski, K., Schmidt, M., Williams, D. P., Mowbray, D. J. and Huyet, G. (2012) 'Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots', Applied Physics Letters, 101(23), pp. 231109. doi: 10.1063/1.4769431
Publisher(s): AIP Publishing
File Format(s): application/pdf
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First Indexed: 2017-09-06 06:39:15 Last Updated: 2017-09-06 06:39:15