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Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors
Negara, Muhammad A.; Veksler, D.; Huang, J.; Ghibaudo, G.; Hurley, Paul K.; Bersuker, G.; Goel, N.; Kirsch, P.
We report an In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistor with a peak Hall mobility of 8300 cm(2)/Vs at a carrier density of 2 x 10(12) cm(-2). Comparison of split capacitance-voltage (CV) and Hall Effect measurements for the extracted electron mobility have shown that the split-CV can lead to an overestimation of the channel carrier concentration and a corresponding underestimation of electron mobility. An analysis of the electron density dependence versus gate voltage allows quantifying the inaccuracy of the split-CV technique. Finally, the analysis supported by multi-channel conduction simulations indicates presence of carriers spill over into the top InP barrier layer at high gate voltages. (C) 2011 American Institute of Physics. (doi: 10.1063/1.3665033)
Keyword(s): MOSFETS; Carrier mobility; III-V semiconductors; Hall mobility; Carrier density; Electron mobility
Publication Date:
2011
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: University College Cork
Funder(s): Science Foundation Ireland
Citation(s): Negara, M. A., Veksler, D., Huang, J., Ghibaudo, G., Hurley, P. K., Bersuker, G., Goel, N. and Kirsch, P. (2011) 'Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors', Applied Physics Letters, 99(23), pp. 232101. doi: 10.1063/1.3665033
Publisher(s): AIP Publishing
File Format(s): application/pdf
Related Link(s): http://aip.scitation.org/doi/abs/10.1063/1.3665033
First Indexed: 2017-09-06 06:39:18 Last Updated: 2017-09-06 06:39:18