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Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)(2)S treatment
O'Connor, Éamon; Monaghan, Scott; Cherkaoui, Karim; Povey, Ian M.; Hurley, Paul K.
The electrical properties of metal-oxide-semiconductor capacitors incorporating atomic layer deposited Al2O3 on n-type and p-type In0.53Ga0.47As were investigated. A clear minority carrier response was observed for both n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As devices following an optimized ammonium sulfide (NH4)(2)S treatment. Capacitance-voltage and conductance-voltage measurements performed at varying temperatures allowed an Arrhenius extraction of activation energies for the minority carrier response, indicating a transition from a generation-recombination regime to a diffusion controlled response. (C) 2011 American Institute of Physics. (doi:10.1063/1.3663535)
Keyword(s): Alumina; Atomic layer deposition; Capacitance; Diffusion; Electrical conductivity; Gallium arsenide; Gold; III-V semiconductors; Indium compounds; Minority carriers; MOS capacitors; Nickel; Ozone
Publication Date:
2011
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: University College Cork
Funder(s): Science Foundation Ireland
Citation(s): O’Connor, É., Monaghan, S., Cherkaoui, K., Povey, I. M. and Hurley, P. K. (2011) 'Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment', Applied Physics Letters, 99(21), pp. 212901. doi: 10.1063/1.3663535
Publisher(s): AIP Publishing
File Format(s): application/pdf
Related Link(s): http://aip.scitation.org/doi/abs/10.1063/1.3663535
First Indexed: 2017-09-06 06:39:18 Last Updated: 2017-09-06 06:39:18