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Complex emission dynamics of type-II GaSb/GaAs quantum dots
Gradkowski, Kamil; Pavarelli, Nicola; Ochalski, Tomasz J.; Williams, David P.; Tatebayashi, Jun; Huyet, Guillaume; O'Reilly, Eoin P.; Huffaker, Diana L.
Optical properties of the GaSb/GaAs quantum dot system are investigated using a time-resolved photoluminescence technique. In this type-II heterostructure the carriers of different species are spatially separated and, as a consequence, a smooth evolution of both the emission wavelength and decay timescale is observed. A wavelength shift of 170 nm is measured simultaneously with the progressive timescale change from 100 ps to 23 ns. These phenomena are explained by the evolution of the carrier density, which brings a modification to the optical transition probability as well as the shift in the emission toward the higher energies. (C) 2009 American Institute of Physics. (10.1063/1.3202419)
Keyword(s): Alloys; Carrier density; Gallium arsenide; Gallium compounds; III-V semiconductors; Photoluminescence; Semiconductor heterojunctions; Semiconductor quantum dots; Time resolved spectra; Quantum dots; Wave functions; Quantum wells
Publication Date:
2009
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: University College Cork
Funder(s): Science Foundation Ireland; Higher Education Authority
Citation(s): Gradkowski, K., Pavarelli, N., Ochalski, T. J., Williams, D. P., Tatebayashi, J., Huyet, G., O’Reilly, E. P. and Huffaker, D. L. (2009) 'Complex emission dynamics of type-II GaSb/GaAs quantum dots', Applied Physics Letters, 95(6), pp. 061102. doi: 10.1063/1.3202419
Publisher(s): AIP Publishing
File Format(s): application/pdf
Related Link(s): http://aip.scitation.org/doi/abs/10.1063/1.3202419
First Indexed: 2017-09-06 06:39:31 Last Updated: 2017-09-06 06:39:31