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An analysis of 1.55 mu m InAs/InP quantum dash lasers
Heck, Susannah C.; Healy, Sorcha B.; Osborne, Simon; O'Reilly, Eoin P.; Lelarge, Francois; Poingt, F.; Accard, A.; Pommereau, F.; Le Gouezigou, O.; Dagens, B.
Calculations show that electron states are not confined in the dashes in 1.55 mu m InAs/InP quantum dash-in-a-well laser structures. The combination of strain and three-dimensional confinement reduces the calculated density of states (DOS) near the valence band maximum, with the conduction and valence DOS then almost equal close to the band edges. Calculations and photoabsorption measurements show strongly polarized spontaneous emission and gain spectra. Experimental analysis shows the room temperature threshold current is dominated by nonradiative current paths. (C) 2008 American Institute of Physics. (DOI: 10.1063/1.2952194)
Keyword(s): Semiconductor-lasers; Amplifiers; Strain; Dots; III-V semiconductors; Band structure; Quantum dots; Quantum wells; Polarization
Publication Date:
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: University College Cork
Funder(s): Science Foundation Ireland
Citation(s): Heck, S. C., Healy, S. B., Osborne, S., O’Reilly, E. P., Lelarge, F., Poingt, F., Accard, A., Pommereau, F., Gouezigou, O. L. and Dagens, B. (2008) 'An analysis of 1.55μm InAs∕InP quantum dash lasers', Applied Physics Letters, 92(25), pp. 251105. doi: 10.1063/1.2952194
Publisher(s): AIP Publishing
File Format(s): application/pdf
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First Indexed: 2017-09-06 06:39:34 Last Updated: 2017-09-06 06:39:34