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Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states
Uskov, Alexander V.; O'Reilly, Eoin P.; McPeake, Dermot; Ledentsov, Nikolai N.; Bimberg, D.; Huyet, Guillaume
The carrier-induced refractive index in quantum dot (QD) structures due to optical transitions from QD levels to continuum states is considered. It is shown that, for large photon energies, the refractive index change is given asymptotically by the Drude formula. Calculations of the linewidth enhancement factor, alpha, show that alphasimilar to1 due to this contribution to the total refractive index. Furthermore, for highly localized QD states, the absorption coefficient at the photon energies similar to0.8-1.0 eV due to these transitions can be on the order of 10(3) m(-1). (C) 2004 American Institute of Physics. (DOI: 10.1063/1.1639933)
Keyword(s): Linewidth enhancement factor; Semiconductor-laser; Filamentation; Dependence; Gain; Quantum dots; Refractive index; Photons; Absorption coefficient; Linewidths
Publication Date:
2004
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: University College Cork
Funder(s): Science Foundation Ireland; Higher Education Authority
Citation(s): Uskov, A. V., O’Reilly, E. P., McPeake, D., Ledentsov, N. N., Bimberg, D. and Huyet, G. (2004) 'Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states', Applied Physics Letters, 84(2), pp. 272-274. doi: 10.1063/1.1639933
Publisher(s): AIP Publishing
File Format(s): application/pdf
Related Link(s): http://aip.scitation.org/doi/abs/10.1063/1.1639933
First Indexed: 2017-09-06 06:39:39 Last Updated: 2017-09-06 06:39:39