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Rhenium-doped MoS2 films
Hallam, Toby; Monaghan, Scott; Gity, Farzan; Ansari, Lida; Schmidt, Michael; Downing, Clive; Cullen, Conor P.; Nicolosi, Valeria; Hurley, Paul K.; Duesberg, Georg S.
Tailoring the electrical properties of transition metal dichalcogenides by doping is one of the biggest challenges for the application of 2D materials in future electronic devices. Here, we report on a straightforward approach to the n-type doping of molybdenum disulfide (MoS2) films with rhenium (Re). High-Resolution Scanning Transmission Electron Microscopy and Energy-Dispersive X-ray spectroscopy are used to identify Re in interstitial and lattice sites of the MoS2 structure. Hall-effect measurements confirm the electron donating influence of Re in MoS2, while the nominally undoped films exhibit a net p-type doping. Density functional theory (DFT) modelling indicates that Re on Mo sites is the origin of the n-type doping, whereas S-vacancies have a p-type nature, providing an explanation for the p-type behaviour of nominally undoped MoS2 films.
Keyword(s): Energy dispersive x-ray spectroscopy; Electron microscopy; Density functional theory; Hall effect; Interstitials; Molybdenum compounds; Rhenium; Scanning-transmission electron microscopy; Semiconductor doping; Semiconductor materials; Semiconductor thin films; Vacancies (crystal); X-ray chemical analysis
Publication Date:
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: University College Cork
Funder(s): Science Foundation Ireland
Citation(s): Hallam, T., Monaghan, S., Gity, F., Ansari, L., Schmidt, M., Downing, C., Cullen, C. P., Nicolosi, V., Hurley, P. K. and Duesberg, G. S. (2017) 'Rhenium-doped MoS2 films', Applied Physics Letters, 111(20), 203101 (5 pp). doi: 10.1063/1.4995220
Publisher(s): AIP Publishing
File Format(s): application/pdf
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First Indexed: 2017-11-25 06:56:25 Last Updated: 2017-11-25 06:56:25