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Ultra-high-density arrays of defect-free AlN nanorods: a "space-filling" approach
Conroy, Michele; Zubialevich, Vitaly Z.; Li, Haoning; Petkov, Nikolay; O'Donoghue, Sally; Holmes, Justin D.; Parbrook, Peter J.
Nanostructured semiconductors have a clear potential for improved optoelectronic devices, such as high-efficiency light-emitting diodes (LEDs). However, most arrays of semiconductor nanorods suffer from having relatively low densities (or “fill factors”) and a high degree of nonuniformity, especially when produced by self-organized growth. Ideally an array of nanorods for an optoelectronic emitter should have a fill factor close to 100%, with uniform rod diameter and height. In this article we present a “space-filling” approach for forming defect-free arrays of AlN nanorods, whereby the separation between each rod can be controlled to 5 nm due to a self-limiting process. These arrays of pyramidal-topped AlN nanorods formed over wafer-scale areas by metal organic chemical vapor deposition provide a defect-free semipolar top surface, for potential optoelectronic device applications with the highest reported fill factor at 98%.
Keyword(s): Aluminum nitride; Growth mechanism; III-nitrides; Nanorods; Nanowires
Publication Date:
2015
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: University College Cork
Funder(s): Higher Education Authority; Science Foundation Ireland
Citation(s): Conroy, M., Zubialevich, V. Z., Li, H., Petkov, N., O’Donoghue, S., Holmes, J. D. and Parbrook, P. J. (2016) 'Ultra-High-Density Arrays of Defect-Free AlN Nanorods: A “Space-Filling” Approach', ACS Nano, 10(2), pp. 1988-1994. doi:10.1021/acsnano.5b06062
Publisher(s): American Chemical Society
File Format(s): application/pdf
First Indexed: 2018-01-27 06:38:42 Last Updated: 2018-01-27 06:38:42