Institutions | About Us | Help | Gaeilge
rian logo

Go Back
Reinventing solid state electronics: harnessing quantum confinement in bismuth thin films
Gity, Farzan; Ansari, Lida; Lanius, Martin; Schüffelgen, Peter; Mussler, Gregor; Grützmacher, Detlev; Greer, James C.
Solid state electronics relies on the intentional introduction of impurity atoms or dopants into a semiconductor crystal and/or the formation of junctions between different materials (heterojunctions) to create rectifiers, potential barriers, and conducting pathways. With these building blocks, switching and amplification of electrical currents and voltages are achieved. As miniaturisation continues to ultra-scaled transistors with critical dimensions on the order of ten atomic lengths, the concept of doping to form junctions fails and forming heterojunctions becomes extremely difficult. Here, it is shown that it is not needed to introduce dopant atoms nor is a heterojunction required to achieve the fundamental electronic function of current rectification. Ideal diode behavior or rectification is achieved solely by manipulation of quantum confinement using approximately 2 nm thick films consisting of a single atomic element, the semimetal bismuth. Crucially for nanoelectronics, this approach enables room temperature operation.
Keyword(s): Bismuth; Quantum confinement; Room temperature
Publication Date:
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: University College Cork
Funder(s): Science Foundation Ireland
Citation(s): Gity, F., Ansari, L., Lanius, M., Schüffelgen, P., Mussler, G., Grützmacher, D. and Greer, J. C. (2017) 'Reinventing solid state electronics: harnessing quantum confinement in bismuth thin films', Applied Physics Letters, 110(9), 093111 (5pp). doi:10.1063/1.4977431
Publisher(s): AIP Publishing
File Format(s): application/pdf
Related Link(s):
First Indexed: 2018-04-05 06:30:05 Last Updated: 2018-04-05 06:30:05