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Impact of second-order piezoelectricity on electronic and optical properties of c-plane InxGa12xN quantum dots: consequences for long wavelength emitters
Patra, Saroj K.; Schulz, Stefan
In this work, we present a detailed analysis of the second-order piezoelectric effect in c-plane InxGa1xN/GaN quantum dots and its consequences for electronic and optical properties of these systems. Special attention is paid to the impact of increasing In content x on the results. We find that in general the second-order piezoelectric effect leads to an increase in the electrostatic built-in field. Furthermore, our results show that for an In content 30%, this increase in the built-in field has a significant effect on the emission wavelength and the radiative lifetimes. For instance, at 40% In, the radiative lifetime is more than doubled when taking second-order piezoelectricity into account. Overall, our calculations reveal that when designing and describing the electronic and optical properties of c-plane InxGa1xN/GaN quantum dot based light emitters with high In contents, second-order piezoelectric effects cannot be neglected.
Keyword(s): Second-order piezoelectric effect; Electrostatic built-in field; Emission wavelength; Radiative lifetime
Publication Date:
2017
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: University College Cork
Funder(s): Science Foundation Ireland
Citation(s): Patra, S. K. and Schulz, S. (2017) 'Impact of second-order piezoelectricity on electronic and optical properties of c-plane InxGa12xN quantum dots: consequences for long wavelength emitters', Applied Physics Letters, 111(10), 103103 (5pp). doi:10.1063/1.4991720
Publisher(s): AIP Publishing
File Format(s): application/pdf
First Indexed: 2018-04-10 06:30:41 Last Updated: 2019-01-19 06:59:18