Institutions | About Us | Help | Gaeilge
rian logo


Mark
Go Back
Epitaxial growth of (0001) oriented porous GaN layers by chemical vapour deposition
Bilousov, Oleksandr V.; Carvajal, Joan J.; Mena, Josue; Martinez, Oscar; Jimenez, Juan; Geaney, Hugh; Diaz, Francesc; Aguilo, Magdalena; O'Dwyer, Colm
LEDs with enhanced light extraction efficiency and sensors with improved sensitivity have been developed using porous semiconductors. Here, the growth of porous GaN epitaxial layers oriented along the [0001] crystallographic direction on Al2O3, SiC, AlN and GaN substrates is demonstrated. A lattice mismatch between the substrate and the porous GaN layer directly affects the structure and porosity of the porous GaN layer on each substrate. Deposition of unintentionally doped n-type porous GaN on non-porous p-type GaN layers allows for the fabrication of high quality rectifying p–n junctions, with potential applications in high brightness unencapsulated GaN-based light emitting diodes and high surface area wide band gap sensor devices.
Keyword(s): LEDs; Porous semiconductors; Light emitting diodes; GaN layer; Light extraction efficiency
Publication Date:
2014
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: University College Cork
Citation(s): Bilousov, O. V., Carvajal, J. J., Mena, J., Martinez, O., Jimenez, J., Geaney, H., Diaz, F., Aguilo, M. and O'Dwyer, C. (2014) 'Epitaxial growth of (0001) oriented porous GaN layers by chemical vapour deposition', CrystEngComm, 16(44), pp. 10255-10261. doi: 10.1039/C4CE01339E
Publisher(s): Royal Society of Chemistry (RSC)
File Format(s): application/pdf
First Indexed: 2018-05-12 06:31:18 Last Updated: 2018-05-12 06:31:18