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Porous GaN and high-k MgO-GaN MOS diode layers grown in a single step on silicon
Bilousov, Oleksandr V.; Carvajal, Joan J.; Vilalta-Clemente, A.; Ruterana, P.; Diaz, Francesc; Aguilo, Magdalena; O'Dwyer, Colm
Porous GaN polycrystalline layers with n-type conduction characteristics were catalytically grown from Mg films formed by decomposition of a Mg2N3 precursor typically employed for activating p-type conduction in GaN. After being exposed to oxygen, the Mg film oxidized to a polycrystalline high-κ oxide between the ohmic alloy interlayer contact and the porous GaN, while maintaining a clean interface. Electrical measurements on devices coupled to composition analysis and electron microscopy of the component layers confirm that a MOS-type porous GaN diode on silicon can be formed by chemical vapor deposition in a single growth regime.
Keyword(s): Porous silicon; Chemical vapor deposition; Gallium nitride; Interfaces (materials); MOS devices; Semiconducting silicon; Silicon; Composition analysis; Electrical measurement; Growth regime; N-type conduction; P-Type conduction; Polycrystalline; Polycrystalline layers; Single-step
Publication Date:
2014
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: University College Cork
Citation(s): Bilousov, O. V., Carvajal, J. J., Vilalta-Clemente, A., Ruterana, P., Díaz, F., Aguiló, M. and O’Dwyer, C. (2014) 'Porous GaN and High-κ MgO–GaN MOS Diode Layers Grown in a Single Step on Silicon', Chemistry of Materials, 26(2), pp. 1243-1249. doi: 10.1021/cm4037023
Publisher(s): American Chemical Society (ACS)
File Format(s): application/pdf
Related Link(s): http://pubs.acs.org/doi/abs/10.1021/cm4037023
First Indexed: 2018-05-16 06:32:35 Last Updated: 2018-05-16 06:32:35