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Process of formation of porous layers in n-InP
Quill, Nathan; Clancy, Ian; Nakahara, Shohei; Belochapkine, Serguei; O'Dwyer, Colm; Buckley, D. Noel; Lynch, Robert P.
This paper describes variations in current density observed in linear sweep voltammetry curves during the anodization of n-InP in aqueous KOH electrolyte and how these variations arise. The analysis is performed by stopping the anodization after different durations of etching and observing via scanning electron microscopy and other techniques the porous structures that have formed. A mathematical model for the expansion and merging of domains of pores that propagate preferentially along the <111>A directions is also presented and used to explain the previously mentioned variations in current density.
Keyword(s): Semiconducting indium phosphide; Electrolytes; Scanning electron microscopy; Anodizations; Linear sweep voltammetry; Porous layers; Porous structures
Publication Date:
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: University College Cork
Citation(s): Quill, N., Clancy, I., Nakahara, S., Belochapkine, S., O'Dwyer, C., Buckley, D. N. and Lynch, R. P. (2017) 'Process of Formation of Porous Layers in n-InP', ECS Transactions, 77(4), pp. 67-96. doi: 10.1149/07704.0067ecst
Publisher(s): Electrochemical Society
File Format(s): application/pdf
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First Indexed: 2018-05-23 06:30:52 Last Updated: 2018-05-23 06:30:52