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Growth of crystalline copper silicide nanowires in high yield within a high boiling point solvent system
Geaney, Hugh; Dickinson, Calum; O'Dwyer, Colm; Mullane, Emma; Singh, Ajay; Ryan, Kevin M.
Here, we report the formation of high density arrays of Cu15Si4 nanowires using a high boiling point organic solvent based method. The reactions were carried out using Cu foil substrates as the Cu source with nanowire growth dependent upon the prior formation of Cu15Si4 crystallites on the surface. The method shows that simple Si delivery to metal foil can be used to grow high densities of silicide nanowires with a tight diameter spread at reaction temperatures of 460 °C. The nanowires were characterized by high-resolution transmission electron microscopy (HRTEM), high-resolution scanning electron microscopy (HRSEM), and X-ray photoelectron spectroscopy (XPS), and electrical analysis showed that they possess low resistivities.
Keyword(s): Copper; High boiling point solvent synthesis; Silicide nanowires; X-ray photoelectron spectroscopy
Publication Date:
2012
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: University College Cork
Funder(s): Science Foundation Ireland; Higher Education Authority
Citation(s): Geaney, H., Dickinson, C., O’Dwyer, C., Mullane, E., Singh, A. and Ryan, K. M. (2012) 'Growth of Crystalline Copper Silicide Nanowires in High Yield within a High Boiling Point Solvent System', Chemistry of Materials, 24(22), pp. 4319-4325. doi: 10.1021/cm302066n
Publisher(s): American Chemical Society (ACS)
File Format(s): application/pdf
Related Link(s): https://pubs.acs.org/doi/abs/10.1021/cm302066n
First Indexed: 2018-06-13 06:30:36 Last Updated: 2018-06-13 06:30:36