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Precursor concentration and substrate effects on high rate dip-coated vanadium oxide thin films.
Glynn, Colm; Aureau, Damien; O'Hanlon, Sally; Daly, Luke; Geaney, Hugh; Collins, Gillian; Etcheberry, Arnaud; O'Dwyer, Colm
Uniform thin films of vanadium pentoxide were dip-coated from a high-concentration vanadium oxytriisopropoxide precursor which is shown to be resistant to the dewetting processes which can form surface pinhole defects. Through appropriate withdrawal speed choice, the thin films have a smooth uniform surface morphology with a low rms roughness of <1 nm in both their amorphous and crystallized states. The structure of the thin films follows that of bulk vanadium pentoxide but in a nanostructured form. The deposition methods shown can be applied to prepare thin films upon a variety of different substrates and other alkoxide based metal oxide materials.
Keyword(s): Films; Thin films; Deposition methods; Dewetting process; Different substrates; Metal oxide materials; Precursor concentration; Substrate effects; Vanadium oxide thin films; Vanadium pentoxide; Amorphous films; Deposition; Metals; Oxide films; Photonics; Substrates; Surface defects; Vanadium; Vanadium compounds
Publication Date:
2015
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: University College Cork
Funder(s): Science Foundation Ireland
Citation(s): Glynn, C., Aureau, D., O'Hanlon, S., Daly, L., Geaney, H., Collins, G., Etcheberry, A. and O'Dwyer, C. (2015) 'Precursor Concentration and Substrate Effects on High Rate Dip-Coated Vanadium Oxide Thin Films', ECS Transactions, 64(42), pp. 1-9. doi: 10.1149/06442.0001ecst
Publisher(s): Electrochemical Society
File Format(s): application/pdf
Related Link(s): http://ecst.ecsdl.org/content/64/42/1.abstract
First Indexed: 2018-06-13 06:30:37 Last Updated: 2018-06-13 06:30:37