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Nanoporous domains in n-InP anodized in KOH
Lynch, Robert P.; O'Dwyer, Colm; Sutton, David; Newcomb, Simon B.; Buckley, D. Noel
A model of porous structure growth in semiconductors based on propagation of pores along the <111>A directions has been developed. The model predicts that pores originating at a surface pit lead to porous domains with a truncated tetrahedral shape. SEM and TEM were used to examine cross- sections of n-InP electrodes in the early stages of anodization in aqueous KOH and showed that pores propagate along the <111>A directions. Domain outlines observed in both TEM and SEM images are in excellent agreement with the model. The model is further supported by plan-view TEM and surface SEM images. Quantitative measurements of aspect ratios of the observed domains are in excellent agreement with the predicted values.
Keyword(s): (1 1 0) surface; Anodization; Compound semiconductor (CS); Cross sections (CS); Early stages; Electrochemical Society (ECS); International symposium; Nano porous; Porous domains; Porous structures; Predicted values; Quantitative measurements; Scanning electron microscopy (SEM) images; SEM and TEM; Solution interfaces
Publication Date:
2007
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: University College Cork
Citation(s): Lynch, R. P., O'Dwyer, C., Sutton, D., Newcomb, S. B. and Buckley, D. N. (2007) 'Nanoporous Domains in n-InP Anodized in KOH', ECS Transactions, 6(2), pp. 355-366. doi: 10.1149/1.2731203
Publisher(s): Electrochemical Society
File Format(s): application/pdf
Related Link(s): http://ecst.ecsdl.org/content/6/2/355.abstract
First Indexed: 2018-06-15 06:31:02 Last Updated: 2018-06-15 06:31:02