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Preferential <111>A pore propagation mechanism in n-InP anodized in KOH
Lynch, Robert P.; O'Dwyer, Colm; Quill, Nathan; Nakahara, Shohei; Newcomb, Simon B.; Buckley, D. Noel
This paper describes the formation of pores during the anodization of n-InP in aqueous KOH. The pores propagate preferentially along the <111>A crystallographic directions and form truncated tetrahedral domains. A model is presented that explains preferential <111>A pore propagation and the uniform diameters of pores. The model outlines how pores can deviate from the <111>A directions and from their characteristic diameters. It also details the effect of variation of carrier concentration on the dimensions of the porous structures.
Keyword(s): Electric conductivity; Carrier concentration; Crystals; Semiconductor materials; Anodization; Crystallographic directions; Inp; Porous structures; Propagation mechanisms; Uniform diameters
Publication Date:
2008
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: University College Cork
Citation(s): Lynch, R., O'Dwyer, C., Quill, N., Nakahara, S., Newcomb, S. B. and Buckley, D. N. (2008) 'Preferential <111>A Pore Propagation Mechanism in n-InP Anodized in KOH', ECS Transactions, 16(3), pp. 393-404.
Publisher(s): Electrochemical Society
File Format(s): application/pdf
Related Link(s): http://ecst.ecsdl.org/content/16/3/393.abstract
First Indexed: 2018-06-15 06:31:02 Last Updated: 2018-06-15 06:31:02