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Chemical functionalisation of silicon and germanium nanowires
Collins, Gillian; Holmes, Justin D.
The reduced dimensionality of nanowires implies that surface effects significantly influence their properties, which has important implications for the fabrication of nanodevices such as field effect transistors and sensors. This review will explore the strategies available for wet chemical functionalisation of silicon (Si) and germanium (Ge) nanowires. The stability and electrical properties of surface modified Si and Ge nanowires is explored. While this review will focus primarily on nanowire surfaces, much has been learned from work on planar substrates and differences between 2D and nanowire surfaces will be high-lighted. The possibility of band gap engineering and controlling electronic characteristics through surface modification provides new opportunities for future nanowire based applications. Nano-sensing is emerging as a major application of modified Si nanowires and the progress of these devices to date is discussed.
Keyword(s): Electric wire; Electric properties; Field effect transistors; Germanium; Nanowires; Silicon; Two dimensional
Publication Date:
2011
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: University College Cork
Funder(s): Science Foundation Ireland
Citation(s): Collins, G. and Holmes, J. D. (2011) 'Chemical functionalisation of silicon and germanium nanowires', Journal of Materials Chemistry, 21(30), pp. 11052-11069. doi: 10.1039/C1JM11028D
Publisher(s): Royal Society of Chemistry (RSC)
File Format(s): application/pdf
Related Link(s): http://pubs.rsc.org/en/content/articlelanding/2011/jm/c1jm11028d
First Indexed: 2018-09-13 06:31:01 Last Updated: 2018-09-13 06:31:01