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Probing thermal flux in twinned Ge nanowires through Raman spectroscopy
Majumdar, Dipanwita; Biswas, Subhajit; Ghoshal, Tandra; Holmes, Justin D.; Singha, Achintya
We report a noninvasive optical technique based on micro-Raman spectroscopy to study the temperature-dependent phonon behavior of normal (nondefective) and twinned germanium nanowires (Ge-NWs). We studied thermophysical properties of Ge-NWs from Raman spectra, measured by varying excitation laser power at ambient condition. We derived the laser-induced temperature rise during Raman measurements by analyzing the Raman peak position for both the NWs, and for a comparative study we performed the same for bulk Ge. The frequency of the Ge–Ge phonon mode softens for all the samples with the increase in temperature, and the first-order temperature coefficient (χT) for defected NWs is found to be higher than normal NWs and bulk. We demonstrated that apart from the size, the lamellar twinning and polytype phase drastically affect the heat transport properties of NWs.
Keyword(s): Germanium nanowire; Laser-induced heating; Polytype phase; Raman spectroscopy; Thermal properties
Publication Date:
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: University College Cork
Funder(s): Science Foundation Ireland
Citation(s): Majumdar, D., Biswas, S., Ghoshal, T., Holmes, J. D. and Singha, A. (2015) 'Probing Thermal Flux in Twinned Ge Nanowires through Raman Spectroscopy', ACS Applied Materials & Interfaces, 7(44), pp. 24679-24685. doi: 10.1021/acsami.5b07025
Publisher(s): American Chemical Society (ACS)
File Format(s): application/pdf
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First Indexed: 2018-09-13 06:31:01 Last Updated: 2018-09-13 06:31:01