Institutions | About Us | Help | Gaeilge
rian logo


Mark
Go Back
Synthesis of silicon-germanium axial nanowire heterostructures in a solvent vapor growth system using indium and tin catalysts
Mullane, E.; Geaney, Hugh; Ryan, Kevin M.
Here we describe a relatively facile synthetic protocol for the formation of Si-Ge and Si-Ge-Si1-xGex axial nanowire heterostructures. The wires are grown directly on substrates with an evaporated catalytic layer placed in the vapour zone of a high boiling point solvent with the silicon and germanium precursors injected as liquids sequentially. We show that these heterostructures can be formed using either indium or tin as the catalyst seeds which form in situ during the thermal anneal. There is a direct correlation between growth time and segment length allowing good control over the wire composition. The formation of axial heterostructures of Si-Ge-Si1-xGex nanowires using a triple injection is further discussed with the alloyed Si1-xGex third component formed due to residual Ge precursor and its greater reactivity in comparison to silicon. It was found that the degree of tapering at each hetero-interface varied with both the catalyst type and composition of the NW. The report shows the versatility of the solvent vapour growth system for the formation of complex Si-Ge NW heterostructures. ACCEPTED peer-reviewed
Keyword(s): field-effect transistors; junction solar-cells; GE nanowires
Publication Date:
2015
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: University of Limerick
Funder(s): Science Foundation Ireland
Citation(s): 11PI1148
Physical Chemistry Chemical Physics : PCCP;17, pp. 6919-6924
http://dx.doi.org/ 10.1039/C4CP04450A
11PI-1148
Publisher(s): Royal Society of Chemistry
First Indexed: 2018-12-02 06:25:33 Last Updated: 2018-12-05 06:25:26