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Growth of crystalline copper silicide nanowires in high yield within a high boiling point solvent system
Geaney, Hugh; Dickinson, Calum; O'Dwyer, Colm; Mullane, Emma; Singh, Ajay; Ryan, Kevin M.
Here, we report the formation of high density arrays of Cu15Si4 nanowires using a high boiling point organic solvent based method. The reactions were carried out using Cu foil substrates as the Cu source with nanowire growth dependent upon the prior formation of Cu15Si4 crystallites on the surface. The method shows that simple Si delivery to metal foil can be used to grow high densities of suicide nanowires with a tight diameter spread at reaction temperatures of 460 degrees C. The nanowires were characterized by high-resolution transmission electron microscopy (HRTEM), high-resolution scanning electron microscopy (HRSEM), and X-ray photoelectron spectroscopy (XPS), and electrical analysis showed that they possess low resistivities. peer-reviewed
Keyword(s): silicide nanowires; copper; high boiling point solvent synthesis; SI
Publication Date:
2012
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: University of Limerick
Funder(s): Science Foundation Ireland
Citation(s): 06IN1I85
Chemistry of Materials;24 (22), pp. 4319-4325
http://dx.doi.org/10.1021/cm302066n
06/IN.1/I85
07/SRC/B1160
Publisher(s): American Chemical Society
First Indexed: 2018-12-05 06:25:45 Last Updated: 2018-12-05 06:25:45