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Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography
Zubialevich, Vitaly Z.; Pampili, Pietro; McLaren, M.; Arredondo-Arechavala, Miryam; Sabui, G.; Shen, Z. J.; Parbrook, Peter J.
A comprehensive description of a procedure to form dense locally ordered 2D arrays of vertically aligned hexagonal in section GaN nanocolumns (NCs) without height deviations will be presented. Particular focus will be given for the preparation of silica nanosphere hard masks, dry etching to form GaN NCs, wet etching to modify NC shape, thermal annealing and regrowth to recover non-polar m-plane facets, improve NC crystal quality and array fill factor.
Keyword(s): Annealing; Gallium compounds; III-V semiconductors; Masks; Nanolithography; Nanostructured materials; Semiconductor growth; Wide band gap semiconductors; Dense nanocolumn arrays; Hybrid top-down-regrow approach; Dense locally ordered 2D arrays; Thermal annealing; Nonpolar m-plane facets; NC crystal quality; Array fill factor; Wet etching; Dry etching; Silica nanosphere hard masks; Height deviations; Nanocolumns
Publication Date:
2018
Type: Conference item
Peer-Reviewed: Yes
Language(s): English
Institution: University College Cork
Funder(s): Science Foundation Ireland
Citation(s): Zubialevich, V. Z., Pampili, P., McLaren, M., Arredondo-Arechavala, M., Sabui, G., Shen, Z. J. and Parbrook, P. J. (2018) 'Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography', 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), Cork, Ireland, 23-26 July. doi:10.1109/NANO.2018.8626265
Publisher(s): Institute of Electrical and Electronics Engineers (IEEE)
File Format(s): application/pdf
Related Link(s): https://ieeexplore.ieee.org/document/8626265
First Indexed: 2019-03-20 06:30:31 Last Updated: 2019-06-14 06:31:58