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Inverse scattering method design of regrowth-free single-mode semiconductor lasers for monolithic integration
Shortiss, Kevin; Dernaika, Mohamad; Caro, Ludovic; Seifikar, Masoud; Peters, Frank H.
An inverse scattering method is used to design single moded lasers, using etched depth insensitive pits as perturbations in the laser cavity. We compare 10 pit, 15 pit and 20 pit devices, and report strongly single moded lasers (>40dB).
Keyword(s): Bragg reflectors; Distributed feedback lasers; Inverse scattering; Refractive index; Semiconductor lasers; Single mode lasers
Publication Date:
2018
Type: Conference item
Peer-Reviewed: Yes
Language(s): English
Institution: University College Cork
Citation(s): Shortiss, K., Dernaika, M., Caro, L., Seifikar, M. and Peters, F. H. (2018) 'Inverse scattering method design of regrowth-free single-mode semiconductor lasers for monolithic integration', Proceedings of Advanced Photonics Congress 2018, Zurich, Switzerland, 2-5 July, ITu4B.4 (2pp). doi:10.1364/IPRSN.2018.ITu4B.4
Publisher(s): Optical Society of America
File Format(s): application/pdf
Related Link(s): http://www.osapublishing.org/abstract.cfm?URI=IPRSN-2018-ITu4B.4
First Indexed: 2019-03-26 06:31:57 Last Updated: 2019-03-26 06:31:57