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Edge-coupling of O-Band InP etched-facet lasers to polymer waveguides on SOI by micro-transfer-printing
Loi, Ruggero; Iadanza, Simone; Roycroft, Brendan; O'Callaghan, James; Liu, Lei; Thomas, Kevin; Gocalinska, Agnieszka; Pelucchi, Emanuele; Farrell, Alexander; Kelleher, Steven; Gul, Raja Fazan; Trindade, António José; Gomez, David; O'Faolain, Liam; Corbett, Brian
O-band InP etched facets lasers were heterogeneously integrated by micro-transfer-printing into a 1.54 µm deep recess created in the 3 µm thick oxide layer of a 220 nm SOI wafer. A 7 × 1.5 µm2 cross-section, 2 mm long multimode polymer waveguide was aligned to the ridge post-integration by e-beam lithography with <0.7 µm lateral misalignment and incorporated a tapered silicon waveguide. A 170 nm thick metal layer positioned at the bottom of the recess adjusts the vertical alignment of the laser and serves as a thermal via to sink the heat to the Si substrate. This strategy shows a roadmap for active polymer waveguide-based photonic integrated circuits.
Keyword(s): Waveguide lasers; Optical waveguides; Polymers; Silicon; Laser modes; Substrates; Metals; Heterogeneous integration; III-V semiconductors laser; silicon photonics; polymer waveguides
Publication Date:
2019
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: University College Cork
Funder(s): Science Foundation Ireland
Citation(s): Loi, R., Iadanza, S., Roycroft, B., O’Callaghan, J., Liu, L., Thomas, K., Gocalinska, A., Pelucchi, E., Farrell, A., Kelleher, S., Gul, R. F., Trindade, A. J., Gomez, D., O’Faolain, L. and Corbett, B. (2020) 'Edge-Coupling of O-Band InP Etched-Facet Lasers to Polymer Waveguides on SOI by Micro-Transfer-Printing', IEEE Journal of Quantum Electronics, 56(1), pp. 1-8. doi: 10.1109/JQE.2019.2958365
Publisher(s): Institute of Electrical and Electronics Engineers (IEEE)
File Format(s): application/pdf
Related Link(s): https://ieeexplore.ieee.org/document/8928514
First Indexed: 2020-01-07 06:35:02 Last Updated: 2020-01-07 06:35:02