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Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD
Zubialevich, Vitaly Z.; McLaren, Mathew; Pampili, Pietro; Shen, John; Arredondo-Arechavala, Miryam; Parbrook, Peter J.
Reduction of threading dislocation density in top-down fabricated GaN nanocolumns (NCs) via their successive lateral shrinkage by anisotropic wet etch and lateral overgrowth by metalorganic chemical vapor deposition is studied by transmission electron microscopy. The fabrication process involves a combination of dry and wet etches to produce NC arrays of a low fill factor (<5%), which are then annealed and laterally overgrown to increase the array fill factor to around 20%–30%. The resulting NC arrays show a reduction in threading dislocation density of at least 25 times, allowing for the reduction in material volume due to the array fill factor, with dislocations being observed to bend into the voids between NCs during the overgrowth process.
Keyword(s): Threading dislocation density; Successive lateral shrinkage; Anisotropic wet etch; Lateral overgrowth; Metalorganic chemical vapor deposition; Transmission electron microscopy; Top-down fabricated GaN nanocolumns; NC
Publication Date:
2020
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: University College Cork
Funder(s): Science Foundation Ireland; Higher Education Authority
Citation(s): Zubialevich, V. Z., McLaren, M., Pampili, P., Shen, J., Arredondo-Arechavala, M. and Parbrook, P. J. (2020) 'Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD', Journal of Applied Physics, 127(2), 25306 (7pp). doi: 10.1063/1.5110602
Publisher(s): AIP Publishing
File Format(s): application/pdf
Related Link(s): https://aip.scitation.org/doi/abs/10.1063/1.5110602
First Indexed: 2020-01-22 06:32:34 Last Updated: 2020-01-22 06:32:34