|
Relating
Statistical
MOSFET Model Parameter
Variabilities
to
IC
Manufacturing Process
Fluctuations Enabling Realistic
Worst
Case
Design |
Power, James A.; Donnellan, Brian; Mathewson, Alan; Lane, William A.
|
|
|
|
The
implementation of
a viable
statistical circuit
design methodology requiring
detailed
knowledge
of
the
vari-
abilities of,
and
correlations
among, the
circuit simulator
model
parameters utilized
by
designers,
and the
determination
of
the
important
relationships
between
these
CAD
model parameter
variabilities
and the process
variabilities causing
them
is
pre-
sented.
This
work
addresses
the above requirements
by
detailing
a new framework which
was
adopted
for
a 2-pm
CMOS
technol-
ogy
to
enable
realistic statistical circuit
performance prediction
prior
to
manufacture.
Issues
relating
to
MOSFET
modeling,
the
derivation
of
fast
“direct” parameter
extraction methodologies
suitable
for
rapid parameter
generation,
the employment of
mul-
tivariate
statistical
techniques
to analyze statistical
parametric
data,
and the
ling
of
the
CAD
model parameter variations
to
variabilities
in
process
quantities
are
discussed.
In
this
approach
the correlated
set
of model parameters
is reduced
to a smaller
and
more manageable
set
of
uncorrelated
process-related factors.
The
ensuing
construction
and
validation
of
realistic statistical circuit
performance procedures
is also discussed.
Comparisons between
measured and simulated
variabilities
of
device characteristics
is
utilized
to
demonstrate the accuracy of the
techniques described.
The
advantages
of
the proposed approach
over more
traditional
“worst case” design
methodologies
are demonstrated.
|
|
Keyword(s):
|
MOSFET model; parameter variabilities; IC manufacturing; fluctuations |
Publication Date:
|
1994 |
|
Type:
|
Journal article |
|
Peer-Reviewed:
|
Yes |
|
Institution:
|
Maynooth University |
|
Citation(s):
|
Power, James A. and Donnellan, Brian and Mathewson, Alan and Lane, William A. (1994) Relating Statistical MOSFET Model Parameter Variabilities to IC Manufacturing Process Fluctuations Enabling Realistic Worst Case Design. IEEE Transactions on Semiconductor Manufacturing, 7 (3). pp. 306-319. ISSN 0894-6507 |
|
Publisher(s):
|
Institute of Electrical and Electronics Engineers (IEEE) |
|
File Format(s):
|
other |
|
Related Link(s):
|
http://mural.maynoothuniversity.ie/10471/1/00311334.pdf |
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First Indexed:
2020-04-02 06:15:11 Last Updated:
2020-04-02 06:15:11 |
