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Heterodimensional FET with split drain
Chang, Tongwei; Mathewson, Alan; Kennedy, Michael Peter; Greer, James C.
A modification to heterodimensional field effect transistors (HDFET) is introduced and demonstrated to provide novel switching capabilities. The modification consists of introducing a split drain into the HDFET structure allowing the transistor to operate as a single pole-double throw switch. By extension, multiple pole-multiple throw switches can be made within a single transistor structure by introduction of multiple split drains or sources. If the device is fabricated on silicon germanium substrates, compatibility of the structure with conventional CMOS processing is achievable, allowing for new applications in digital, mixed signal, and high voltage switching.
Keyword(s): Heterodimensional field-effect transistor; Semiconductor relay; Silicon germanium; HDFET; Field-effect transistors; Germanium alloys; Silicon alloys; Semiconductors
Publication Date:
2004
Type: Journal article
Peer-Reviewed: Yes
Language(s): English
Institution: University College Cork
Citation(s): Chang, T., Mathewson, A., Kennedy, M.P., Greer, J.C., 2004. Heterodimensional FET with split drain. IEEE Electron Device Letters, 25(11), pp.737-739.
Publisher(s): IEEE
File Format(s): application/pdf
First Indexed: 2010-04-08 05:30:08 Last Updated: 2016-10-14 06:54:34