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Ferroelectric domain wall pinning at a bicrystal grain boundary in bismuth ferrite
Rodriguez, Brian J.; Chu, Y. H.; Ramesh, R.; Kalinin, S. V.
The ferroelectric polarization switching behavior at the 24 degrees (100) tilt grain boundary (GB) in an epitaxial multiferroic BiFeO3 bicrystal film is studied using piezoresponse force microscopy (PFM). The PFM amplitudes across positively and negatively poled GB regions suggest the presence of a frozen polarization component at the interface. The switching experiments demonstrate that the GB attracts the domain wall and acts as a pinning center. The PFM results are compared with conductive atomic force microscopy and spectroscopy, which suggest domain wall pinning at the GB can be partially attributed to increased conductance at the GB. Other funder Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, managed and operated by UT-Battelle, LLC for the Office of Basic Energy Sciences, U.S. Department of Energy and the Director, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, and U.S. Department of Energy under Contract No. DE-AC02-05CH11231. the Alexander von Humboldt Foundation and National Science Council, R.O.C., under Contract No. NSC 97-3114-M-009-001. Author has checked copyright kpw6/12/13
Keyword(s): Polarization; Ferroelectric; Piezoresponse force microscopy; Domain structure; Tilt grain boundary
Publication Date:
2013
Type: Journal article
Peer-Reviewed: Unknown
Language(s): English
Institution: University College Dublin
Publisher(s): AIP
First Indexed: 2013-12-20 05:42:36 Last Updated: 2018-10-11 16:47:04