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Walsh, Lee A.; Smyth, Christopher M.; Barton, Adam T.; Wang, Qingxiao; Che, Zifan; Yue, Ruoyu; Kim, Jiyoung; Kim, Moon J.; Wallace, Robert M.; Hinkle, Christopher L. |
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The interface between the topological insulator Bi2Se3 and deposited metal films is investigated using x-ray photoelectron spectroscopy including conventional contact metals (Au, Pd, Cr, and Ir) and magnetic materials (Co, Fe, Ni, Co0.8Fe0.2, and Ni0.8Fe0.2). Au is the only metal to show little or no interaction with the Bi2Se3, with no interfacial layer between the metal and the surface of the TI. The other metals show a range of reaction behaviors with the relative strength of reaction (obtained from the amount of Bi2Se3 consumed during reaction) ordered as: Au < Pd < Ir < Co ≤ CoFe < Ni < Cr < NiFe < Fe, in approximate agreement with the behavior expected from the Gibbs free energies of formation for the alloys formed. Post metallization anneals at 300°C in vacuum were also performed for each interface. Several of the metal films were not stable upon anneal and desorbed from the surface (Au, Pd, Ni, and Ni0.8Fe0.2), while Cr, Fe, Co, and Co0.8Fe0.2 showed acc...
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