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Displaying Results 226 - 250 of 3253 on page 10 of 131

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Novel Instrumentation for High Frequency Electrical Conductivity and Magnetisation Dynamics Characterisation (2018)

O'REILLY, JANE MARY

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Utilising Chromium-Based p-Type Transparent Conducting Oxides in Photovoltaic Devices (2018)

MULLARKEY, DARAGH

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Plasmonic Waveguides for Sub-wavelength Light Confinement (2018)

ZHONG, CHUAN

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Time-resolved Spectroscopy of Charge Transfer at the Interface of Nanomaterials and Porphyrins (2018)

ARPAÇAY, PINAR

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Development of Atmospheric PLD of Plasmonic Metal Nanoparticle Films for SERS Application (2018)

KHAN, TAJ MUHAMMAD

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Gender disparity in engineering as a function of physics enrollment and its implications for civil engineering (2009)

Laefer, Debra F.

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Negative ion measurements in RF and DC temporally modulated hydrogen volume ion sources (2000)

Boilson, Deirdre

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Automation by PC interface of a multicusp volume ion source, Denise (1997)

Boilson, Deirdre

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A dipole polarizable potential for reduced and doped CeO(2) obtained from first principles. (2011)

WATSON, GRAEME

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Anomalous electrical transport properties of polyvinyl alcohol-multiwall carbon nanotubes composites below room temperature (2011)

BLAU, WERNER; PADAMATI, RAMESH

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Three-state dual spin valve structure (2010)

COEY, JOHN; FOWLEY, CIARAN

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Simplified TBA equations of the AdS_5 x S^5 mirror model (2009)

FROLOV, SERGEY

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Thermodynamic Bethe Ansatz for the AdS_5 x S^5 Mirror Model (2009)

FROLOV, SERGEY

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Heavy quark physics from lattice QCD (2002)

RYAN, SINEAD MARIE

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Stability and capping of magnetite ultra-thin films (2014)

FLEISCHER, KARSTEN; MAUIT, OZHET; SHVETS, IGOR

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Non-commutative Complex Projective Spaces And The Standard Model (2003)

Dolan, Brian P.

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Quarks and gluons in dense 2-colour QCD. (2009)

Skullerud, Jon-Ivar

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Pressure and volume in the first law of black hole thermodynamics (2011)

Dolan, Brian P.

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Heat transfer and flow structure evaluation of a synthetic jet emanating from a planar heat sink (2014)

PERSOONS, TIM; MURRAY, DARINA

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Spray pyrolysis growth of a high figure of merit, nano-crystalline, p-type transparent conducting material at low temperature (2015)

FLEISCHER, KARSTEN; FARRELL, LEO; SHVETS, IGOR; CAFFREY, DAVID; NORTON, EMMA; O'DO...

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On the relationship between income, fertility rates and the state of democracy in society (2016)

HUTZLER, STEFAN

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Spectroscopic characterization of the Zn(4s(2))center dot Ne[(1)Sigma(+)] and Zn(4s4p pi)center dot Ne[(1)Pi(1)] van der Waals states (1999)

McCaffrey, John G.; Bellert, D.; Leung, Allan W.K.; Breckenridge, W.H.

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Computer simulation in low-temperature plasma physics: future challenges (2016)

Turner, Miles M.

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Realist magic: objects, ontology, causality (2013)

Morton, Timothy

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Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation (2018)

Duffy, Ray; Ricchio, Alessio; Murphy, Ruaidhrí; Maxwell, Graeme; Murphy, Richard; Piasz...

Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation (2018)

Duffy, Ray; Ricchio, Alessio; Murphy, Ruaidhrí; Maxwell, Graeme; Murphy, Richard; Piaszenski, Guido; Petkov, Nikolay; Hydes, Alan; O'Connell, Dan; Lyons, Colin; Kennedy, Noel; Sheehan, Brendan; Schmidt, Michael; Crupi, Felice; Holmes, Justin D.; Hurley, Paul K.; Connolly, James; Hatem, Chris; Long, Brenda

Abstract:

The advent of high surface-to-volume ratio devices has necessitated a revised approach to parameter extraction and process evaluation in field-effect transistor technologies. In this work, active doping concentrations are extracted from the electrical analysis of Si nanowire devices with high surface-to-volume ratios. Nanowire resistance and Si resistivity are extracted, by first extracting and subtracting out the contact resistance. Resistivity (ρ) is selected as the benchmark parameter to compare different doping processes with each other. The impacts of nanowire diameter scaling to 10 nm and of nanowire spacing scaling to <20 nm are extracted for monolayer doping and beam-line ion implantation. Despite introducing significant crystal damage, P beam-line ion implantation beats allyldiphenylphosphine (ADP) P monolayer doping with a SiO2 cap in terms of lower Si resistivity and higher dopant activation, with dependencies on the nanowire width greater than on nanowire spacing. Lim...