rian.ie - Torthaí

A A A

Cuardach Reatha:	'physics' i gach réimse;

Ag Taispeaint Torthaí 3176 - 3195 de 3195 ar leathanach 128 de 128

Marcáil

Topographic anisotropy in continuous magnetic films with two-dimensional surface nanomodulation (2010)

Li, S. P.; Godsell, Jeffrey F.; Roy, Saibal

Marcáil

Effect of intravalley acoustic phonon scattering on quantum transport in multigate silicon nanowire metal-oxide-semiconductor field-effect transistors (2010)

Akhavan, Nima Dehdashti; Afzalian, Aryan; Lee, Chi-Woo; Yan, Ran; Ferain, Isabelle; Raz...

Marcáil

Eight-band k⋅p calculations of the composition contrast effect on the linear polarization properties of columnar quantum dots (2010)

Andrzejewski, Janusz; Sek, Grzegorz; O'Reilly, Eoin P.; Fiore, Andrea; Misiewicz, Jan

Marcáil

Low temperature exfoliation process in hydrogen-implanted germanium layers (2010)

Ferain, Isabelle; Byun, Ki Yeol; Colinge, Cindy; Brightup, S.; Goorsky, M. S.

Marcáil

Precessional dynamics of Ni45Fe55 thin films for ultrahigh frequency integrated magnetics (2010)

Godsell, Jeffrey F.; Kulkarni, Santosh; O'Donnell, Terence; Roy, Saibal

Marcáil

Silver nanowire array-polymer composite as thermal interface material (2009)

Xu, Ju; Munari, Alessio; Dalton, Eric; Mathewson, Alan; Razeeb, Kafil M.

Marcáil

Pyroelectric effect enhancement in laminate composites under short circuit condition (2009)

Chang, H. H. S.; Whatmore, Roger W.; Huang, Z.

Marcáil

Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition (2009)

Long, Rathnait D.; O'Connor, Éamon; Newcomb, Simon B.; Monaghan, Scott; Cherkaoui,...

Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition (2009)

Long, Rathnait D.; O'Connor, Éamon; Newcomb, Simon B.; Monaghan, Scott; Cherkaoui, Karim; Casey, P.; Hughes, Gregory; Thomas, Kevin K.; Chalvet, F.; Povey, Ian M.; Pemble, Martyn E.; Hurley, Paul K.

Achomaireacht:

In this work results are presented on the structural analysis, chemical composition, and interface state densities of HfO2 thin films deposited by atomic layer deposition (ALD) from Hf[N(CH3)(2)](4) and H2O on In0.53Ga0.47As/InP substrates. The structural and chemical properties are investigated using high resolution cross-sectional transmission electron microscopy and electron energy loss spectroscopy. HfO2 films (3-15 nm) deposited on In0.53Ga0.47As are studied following a range of surface treatments including in situ treatment of the In0.53Ga0.47As surface by H2S exposure at 50-350 degrees C immediately following the metal organic vapor phase epitaxy growth of the In0.53Ga0.47As layer, ex situ treatment with (NH4)(2)S, and deposition on the native oxides of In0.53Ga0.47As with no surface treatment. The structural analysis indicates that the In0.53Ga0.47As surface preparation prior to HfO2 film deposition influences the thickness of the HfO2 film and the interlayer oxide. The comp...