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Cuardach Reatha:
'physics' i gach réimse;
3195 míreanna faighte
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Ag Taispeaint Torthaí 51 - 75 de 3195 ar leathanach 3 de 128
Marcáilte
Marcáil
Gold surface with gold nitride–a surface enhanced Raman scattering active substrate
(2009)
Brieva, A.C.; Alves, Luis; Krishnamurthy, Satheesh; Siller, Lidija
Gold surface with gold nitride–a surface enhanced Raman scattering active substrate
(2009)
Brieva, A.C.; Alves, Luis; Krishnamurthy, Satheesh; Siller, Lidija
Achomaireacht:
The nitration of gold surfaces is a nonpolluting method, which can lead to large scale production of substrates with remarkable properties and applications. We present a topographical study of the nanoscale structure of the gold nitride surfaces produced by radio frequency (rf) nitrogen plasma etching of thin gold films. Atomic force microscopy images taken after rf etching reveal the striking appearance of the cluster assembly with large clusters surrounded by small clusters (7.9±1.4 and 2.3±0.9 nm, respectively) appearing to exhibit an attractive interaction. We discuss the possible mechanism for this attraction based on a colloid model by Messina et al. [Phys. Rev. Lett. 85, 872 (2000) ]. This surface exhibits a notable surface enhanced Raman scattering effect demonstrated with L-alanine and rhodamine-6G. The significance of this work is that we found that this SERS active gold nitride surface can be prepared in just one step: by nitrogen plasma etching a thin gold film. Until no...
http://doras.dcu.ie/15352/
Marcáilte
Marcáil
Degradation and breakdown characteristics of thin MgO dielectric layers
(2010)
O'Connor, Robert; Hughes, Greg; Casey, Patrick; Newcomb, Simon B.
Degradation and breakdown characteristics of thin MgO dielectric layers
(2010)
O'Connor, Robert; Hughes, Greg; Casey, Patrick; Newcomb, Simon B.
Achomaireacht:
MgO has been suggested as a possible high-k dielectric for future complementary metal-oxide semiconductor processes. In this work, the time dependent dielectric breakdown (TDDB) characteristics of 20 nm MgO films are discussed. Stress induced leakage current measurements indicate that the low measured Weibull slopes of the TDDB distributions for both n-type and p-type devices cannot be attributed to a lower trap generation rate than for SiO2. This suggests that much fewer defects are required to trigger breakdown in MgO under voltage stress than is the case for SiO2 or other metal-oxide dielectrics. This in turn explains the progressive nature of the breakdown in these films which is observed both in this work and elsewhere. The reason fewer defects are required is attributed to the morphology of the films.
http://doras.dcu.ie/15579/
Marcáilte
Marcáil
Photoemission study of the SiO₂conversion mechanism to magnesium silicate
(2010)
Casey, Patrick; Hughes, Greg
Photoemission study of the SiO₂conversion mechanism to magnesium silicate
(2010)
Casey, Patrick; Hughes, Greg
Achomaireacht:
The objective of this work is to investigate interface chemistries which minimize the interfacial silicon oxide transition region at Si/high-k dielectric interfaces. We report on the mechanism by which a silicon native oxide layer is converted into magnesium silicate. The deposition of metal Mg onto a SiO native oxide surface resulted in the formation of a magnesium silicide in addition to substochiometric silicon oxides and a significant decrease in the oxidised silicon signal. Annealing to 300 °C resulted in the decomposition of the magnesium silicide, oxidation of the Mg, and the desorption of excess metallic Mg. Subsequent annealing to 500 °C resulted in converting the SiO2 into magnesium silicate. The results suggest that the decomposition of the Mg silicide in the presence of the residual native oxide facilitates silicate formation at 500 °C. Due to the reported thermal stability of Mg silicate it is suggested that this process may be beneficial in modifying the interface char...
http://doras.dcu.ie/15580/
Marcáilte
Marcáil
High resolution photoemission study of SiOx/Si(111) interface disruption following in situ HfO₂deposition
(2009)
McDonnell, Stephen; Brennan, Barry; Hughes, Greg
High resolution photoemission study of SiOx/Si(111) interface disruption following in situ HfO₂deposition
(2009)
McDonnell, Stephen; Brennan, Barry; Hughes, Greg
Achomaireacht:
We report on an in situ high resolution core level photoemission study of the early stages of interface formation between an ultrathin SiOx layer ( ∼ 0.3 nm) grown on the atomically clean Si(111) surface and a HfO2 dielectric layer. Si 2p core level spectra acquired at 130 eV photon energy reveal evidence of a chemically shifted component on the lower binding energy side of the substrate peak which is attributed to interface defect states resulting from the incorporation of silicon atoms from the substrate into the interfacial oxide at room temperature. This evidence of Si/SiOx interface disruption would be expected to increase charge carrier scattering mechanisms in the silicon and contribute to the generally observed mobility degradation in high-k stacks with ultrathin silicon oxide interface layers.
http://doras.dcu.ie/15581/
Marcáilte
Marcáil
Atomic resolved material displacement on graphite surfaces by scanning tunnelling microscopy
(1992)
Moriarty, Philip; Hughes, Greg
Atomic resolved material displacement on graphite surfaces by scanning tunnelling microscopy
(1992)
Moriarty, Philip; Hughes, Greg
Achomaireacht:
Atomic scale modifications and subsequent atomic resolution imaging has been achieved on the highly oriented pyrolytic graphite surface in air. Application of short pulse voltages, above a minimum threshold voltage of 3.5 V, across the tunneling gap results in the displacement of a layer or more of atoms to form a hole and create a neighboring mound or ‘‘nanodot’’ from the displaced atoms. We have found a correlation between the hole and ‘‘nanodot’’ volume at the atomic level and observe an asymmetric displacement of material in all cases of feature creation. Nanofeatures as small as four carbon atoms at beta sites have been created. Our experimental observations are consistent with the modification process depending on the gradient in the electric field induced by the rise time of the bias pulse voltage and not the pulse duration. Interesting faceting behavior has also been observed around some hole edges. Tip bias pulsing sometimes induced a tip, and not a surface modification, re...
http://doras.dcu.ie/15582/
Marcáilte
Marcáil
GaAs interfacial self-cleaning by atomic layer deposition
(2008)
Hinkle, C. L.; Sonnet, A. M.; Vogel, E. M.; McDonnell, Stephen; Hughes, Greg; Milojevic...
GaAs interfacial self-cleaning by atomic layer deposition
(2008)
Hinkle, C. L.; Sonnet, A. M.; Vogel, E. M.; McDonnell, Stephen; Hughes, Greg; Milojevic, M.; Lee, B.; Aguirre-Tostado, F. S.; Choi, K. J.; Kim, H. C.; Kim, J.; Wallace, R. M.
Achomaireacht:
The reduction and removal of surface oxides from GaAs substrates by atomic layer deposition (ALD) of Al2O3 and HfO2 are studied using in situ monochromatic x-ray photoelectron spectroscopy. Using the combination of in situ deposition and analysis techniques, the interfacial "self-cleaning" is shown to be oxidation state dependent as well as metal organic precursor dependent. Thermodynamics, charge balance, and oxygen coordination drive the removal of certain species of surface oxides while allowing others to remain. These factors suggest proper selection of surface treatments and ALD precursors can result in selective interfacial bonding arrangements.
http://doras.dcu.ie/15591/
Marcáilte
Marcáil
Electrical, structural, and chemical properties of HfO₂ films formed by electron beam evaporation
(2008)
Cherkaoui, K.; Monaghan, S.; Negara, M.A.; Modreanu, M.; Hurley, P.K.; O’Connell, Debor...
Electrical, structural, and chemical properties of HfO₂ films formed by electron beam evaporation
(2008)
Cherkaoui, K.; Monaghan, S.; Negara, M.A.; Modreanu, M.; Hurley, P.K.; O’Connell, Deborah; McDonnell, Stephen; Hughes, Greg; Wright, S.; Barklie, R.C.; Bailey, P.; Noakes, T.C.Q.
Achomaireacht:
High dielectric constant hafnium oxide films were formed by electron beam (e-beam) evaporation on HF last terminated silicon (100) wafers. We report on the influence of low energy argon plasma ( ∼ 70 eV) and oxygen flow rate on the electrical, chemical, and structural properties of metal-insulator-silicon structures incorporating these e-beam deposited HfO2 films. The use of the film-densifying low energy argon plasma during the deposition results in an increase in the equivalent oxide thickness (EOT) values. We employ high resolution transmission electron microscopy (HRTEM), x-ray photoelectron spectroscopy (XPS), and medium energy ion scattering experiments to investigate and understand the mechanisms leading to the EOT increase. We demonstrate very good agreement between the interfacial silicon oxide thicknesses derived independently from XPS and HRTEM measurements. We find that the e-beam evaporation technique enabled us to control the SiOx interfacial layer thickness down to ∼ ...
http://doras.dcu.ie/15592/
Marcáilte
Marcáil
Time-resolved pump-probe experiments beyond the jitter limitations at FLASH
(2009)
Azima, A.; Düsterer, S.; Radcliffe, P.; Redlin, H.; Stojanovic, N.; Li, Wei B.; Schlarb...
Time-resolved pump-probe experiments beyond the jitter limitations at FLASH
(2009)
Azima, A.; Düsterer, S.; Radcliffe, P.; Redlin, H.; Stojanovic, N.; Li, Wei B.; Schlarb, H.; Feldhaus, J.; Cubaynes, D.; Meyer, M.; Dardis, John; Hayden, Patrick; Hough, Pádraig; Richardson, Vincent; Kennedy, Eugene T.; Costello, John T.
Achomaireacht:
Using a noninvasive, electro-optically based electron bunch arrival time measurement at FLASH (free electron laser in Hamburg) the temporal resolution of two-color pump-probe experiments has been significantly improved. The system determines the relative arrival time of the extended ultraviolet pulse of FLASH and an amplified Ti:sapphire femtosecond-laser pulse at the interaction region better than 90 fs rms. In a benchmarking pump-probe experiment using two-color above threshold ionization of noble gases, an enhancement in the timing resolution by a factor of 4 compared to the uncorrected data is obtained.
http://doras.dcu.ie/15630/
Marcáilte
Marcáil
Single-shot characterization of independent femtosecond extreme ultraviolet free electron and infrared laser pulses
(2007)
Radcliffe, P.; Düsterer, S.; Azima, A.; Redlin, H.; Feldhaus, J.; Dardis, John; Kavanag...
Single-shot characterization of independent femtosecond extreme ultraviolet free electron and infrared laser pulses
(2007)
Radcliffe, P.; Düsterer, S.; Azima, A.; Redlin, H.; Feldhaus, J.; Dardis, John; Kavanagh, Kevin D.; Luna, H.; Pedregosa-Gutierrez, Jofre; Yeates, Patrick; Kennedy, Eugene T.; Costello, John T.; Delserieys, A.; Lewis, C.L.S.; Taïeb, R.; Maquet, A.; Cubaynes, D.; Meyer, M.
Achomaireacht:
Two-color above threshold ionization of helium and xenon has been used to analyze the synchronization between individual pulses of the femtosecond extreme ultraviolet (XUV) free electron laser in Hamburg and an independent intense 120 fs mode-locked Ti:sapphire laser. Characteristic sidebands appear in the photoelectron spectra when the two pulses overlap spatially and temporally. The cross-correlation curve points to a 250 fs rms jitter between the two sources at the experiment. A more precise determination of the temporal fluctuation between the XUV and infrared pulses is obtained through the analysis of the single-shot sideband intensities.
http://doras.dcu.ie/15631/
Marcáilte
Marcáil
Vacuum-ultraviolet resonant photoabsorption imaging of laser produced plasmas
(2000)
Hirsch, John S.; Meighan, Oonagh; Mosnier, Jean-Paul; van Kampen, Paul; Whitty, William...
Vacuum-ultraviolet resonant photoabsorption imaging of laser produced plasmas
(2000)
Hirsch, John S.; Meighan, Oonagh; Mosnier, Jean-Paul; van Kampen, Paul; Whitty, William; Costello, John T.; Lewis, C.L.S.; MacPhee, A.G.; Hirst, G.J.; Westhall, J.; Shaikh, W.
Achomaireacht:
We present results from a vacuum-ultraviolet (VUV) "photoabsorption imaging" technique based on the measurement of the time and space resolved absorption of a quasimonochromatic VUV beam from a laser plasma light source. The use of VUV radiation as a probe beam permits direct access to resonance lines of (singly and more highly charged) ions and also to the resonant and nonresonant continua of atoms and ions. In this experiment we have confined ourselves to measurements using the 3p–3d resonances of Ca, Ca+, and Ca2+ as markers of the temporal and spatial distribution of ground state atoms and ions in an expanding laser plasma plume. We show how time resolved column density maps may be extracted from such images. In addition we have extracted plasma plume velocities from the data, which compare well with an analytical laser ablation model.
http://doras.dcu.ie/15656/
Marcáilte
Marcáil
Short-pulse, extreme-ultraviolet continuum emission from a table-top laser plasma light source
(1997)
Meighan, Oonagh; Gray, Andrew; Mosnier, Jean-Paul; Whitty, William; Costello, John T.; ...
Short-pulse, extreme-ultraviolet continuum emission from a table-top laser plasma light source
(1997)
Meighan, Oonagh; Gray, Andrew; Mosnier, Jean-Paul; Whitty, William; Costello, John T.; Lewis, C.L.S.; MacPhee, A.G.; Allott, R.; Turcu, I.C.E.; Lamb, A.
Achomaireacht:
We have observed extreme-ultraviolet (XUV) “line-free” continuum emission from laser plasmas of high atomic number elements using targets irradiated with 248 nm laser pulses of 7 ps duration at a power density of ∼ 1013 W/cm2. Using both dispersive spectroscopy and streak camera detection, the spectral and temporal evolution of XUV continuum emission for several target atomic numbers has been measured on a time scale with an upper limit of several hundred picoseconds limited by amplified spontaneous emission.
http://doras.dcu.ie/15657/
Marcáilte
Marcáil
Image charge inclusion in the dielectric sphere revisited
(2012)
Redzic, Dragan; Eldakli, Mohsan; Redzic, Milan
Image charge inclusion in the dielectric sphere revisited
(2012)
Redzic, Dragan; Eldakli, Mohsan; Redzic, Milan
Achomaireacht:
Van Siclen (1988 Am. J. Phys. 56 1142) reported a curious property of a dielectric sphere in the field of an external point charge: the field outside the sphere generated by the combination of the original charge exterior and the Kelvin image charge interior to the sphere is independent of the permittivity of the sphere. In this paper,we simplify and correct the original derivation and give a detailed analysis of the sources of the field. We also present various checks for the theory, providing instructive exercises for advanced undergraduates.
http://doras.dcu.ie/17553/
Marcáilte
Marcáil
2002 : Final Year Degree Projects in Physics, Pamphlet
(2002)
Dublin Institute of Technology
2002 : Final Year Degree Projects in Physics, Pamphlet
(2002)
Dublin Institute of Technology
http://arrow.dit.ie/ditbk/8
Marcáilte
Marcáil
Simulation benchmarks for low-pressure plasmas: capacitive discharges
(2013)
Turner, Miles M.; Derzsi, Aranka; Donko, Zoltan; Eremin, Denis; Kelly, Seán; Lafleur, T...
Simulation benchmarks for low-pressure plasmas: capacitive discharges
(2013)
Turner, Miles M.; Derzsi, Aranka; Donko, Zoltan; Eremin, Denis; Kelly, Seán; Lafleur, Trevor; Mussenbrock, Thomas
Achomaireacht:
Benchmarking is generally accepted as an important element in demonstrating the correctness of computer simulations. In the modern sense, a benchmark is a computer simulation result that has evidence of correctness, is accompanied by estimates of relevant errors, and which can thus be used as a basis for judging the accuracy and efficiency of other codes. In this paper, we present four benchmark cases related to capacitively coupled discharges. These benchmarks prescribe all relevant physical and numerical parameters. We have simulated the benchmark conditions using five independently developed particle-in-cell codes. We show that the results of these simulations are statistically indistinguishable, within bounds of uncertainty that we define. We therefore claim that the results of these simulations represent strong benchmarks, that can be used as a basis for evaluating the accuracy of other codes. These other codes could include other approaches than particle-in-cell simulations, w...
http://doras.dcu.ie/17735/
Marcáilte
Marcáil
Chemical identification of luminescence due to Sn and Sb in ZnO
(2013)
Cullen, Joseph; Byrne, Daragh; Johnston, K.; McGlynn, Enda; Henry, Martin O.
Chemical identification of luminescence due to Sn and Sb in ZnO
(2013)
Cullen, Joseph; Byrne, Daragh; Johnston, K.; McGlynn, Enda; Henry, Martin O.
Achomaireacht:
We show that the I10 line in ZnO photoluminescence is associated with Sn impurities. The evidence comes from material implanted with radioactive 117Ag, which decays through 117Cd and 117In to stable 117Sn, and 121Ag which decays through the same chain to stable 121Sb. Supporting evidence is provided by ZnO:Sn prepared by the in-diffusion of stable Sn. The I2 and I9 lines are also shown conclusively to be due to In, confirming earlier identifications in the literature. We also observe shallow bound exciton emission at 3.3643(3) eV due to Sb impurities produced at the end of the decay chain of 121Ag.
http://doras.dcu.ie/19600/
Marcáilte
Marcáil
Atomic oxygen patterning from a biomedical needle-plasma source
(2013)
Kelly, Seán; Turner, Miles M.
Atomic oxygen patterning from a biomedical needle-plasma source
(2013)
Kelly, Seán; Turner, Miles M.
Achomaireacht:
A "plasma needle" is a cold plasma source operating at atmospheric pressure. Such sources interact strongly with living cells, but experimental studies on bacterial samples show that this interaction has a surprising pattern resulting in circular or annular killing structures. This paper presents numerical simulations showing that this pattern occurs because biologically active reactive oxygen and nitrogen species are produced dominantly where effluent from the plasma needle interacts with ambient air. A novel solution strategy is utilised coupling plasma produced neutral (uncharged) reactive species to the gas dynamics solving for steady state profiles at the treated biological surface. Numerical results are compared with experimental reports corroborating evidence for atomic oxygen as a key bactericidal species. Surface losses are considered for interaction of plasma produced reactants with reactive solid and liquid interfaces. Atomic oxygen surface reactions on a reacti...
http://doras.dcu.ie/19725/
Marcáilte
Marcáil
Models of coherent exciton condensation
(2004)
EASTHAM, PAUL
Models of coherent exciton condensation
(2004)
EASTHAM, PAUL
Achomaireacht:
That excitons in solids might condense into a phase-coherent ground state was proposed about 40 years ago, and has been attracting experimental and theoretical attention ever since. Although experimental confirmation has been hard to come by, the concepts released by this phenomenon have been widely influential. This tutorial review discusses general aspects of the theory of exciton and polariton condensates, focussing on the reasons for coherence in the ground state wavefunction, the BCS to Bose crossover(s) for excitons and for polaritons, and the relationship of the coherent condensates to standard lasers.
http://hdl.handle.net/2262/49386
Marcáilte
Marcáil
Microcavity quantum-dot systems for non-equilibrium Bose-Einstein condensation
(2010)
EASTHAM, PAUL
Microcavity quantum-dot systems for non-equilibrium Bose-Einstein condensation
(2010)
EASTHAM, PAUL
Achomaireacht:
We review the practical conditions required to achieve a non-equilibrium BEC driven by quantum dynamics in a system comprising a microcavity field mode and a distribution of localised two-level systems driven to a step-like population inversion profile. A candidate system based on eight 3.8nm layers of In0.23Ga0.77As in GaAs shows promising characteristics with regard to the total dipole strength which can be coupled to the field mode.
http://hdl.handle.net/2262/49586
Marcáilte
Marcáil
Structural distortions and model Hamiltonian parameters: From LSDA to a tight-binding description of LaMn O3
(2007)
EDERER, CLAUDE
Structural distortions and model Hamiltonian parameters: From LSDA to a tight-binding description of LaMn O3
(2007)
EDERER, CLAUDE
Achomaireacht:
peer-reviewed
The physics of manganites is often described within an effective two-band tight-binding #1;TB#2; model for the Mn eg electrons, which apart from the kinetic energy includes also a local ?Hund?s rule? coupling to the t2g core spin and a local coupling to the Jahn-Teller #1;JT#2; distortion of the oxygen octahedra. We test the validity of this model by comparing the energy dispersion calculated for the TB model with the full Kohn-Sham band structure calculated within the local spin-density approximation #1;LSDA#2; to density functional theory. We analyze the effect of magnetic order, JT distortions, and ?GdFeO3-type? tilt rotations of the oxygen octahedra. We show that the hopping amplitudes are independent of magnetic order and JT distortions and that both effects can be described with a consistent set of model parameters if hopping between both nearest and next-nearest neighbors is taken into account. We determine a full set of model parameters from the density fun...
http://hdl.handle.net/2262/31371
Marcáilte
Marcáil
Exposition of semiconducting and ferromagnetic properties of pulsed-laser-deposited thin films of LaFe1-xNixO3 (x=0.3, 0.4, and 0.5)
(2005)
SHVETS, IGOR; ARORA, SUNIL KUMAR
Exposition of semiconducting and ferromagnetic properties of pulsed-laser-deposited thin films of LaFe1-xNixO3 (x=0.3, 0.4, and 0.5)
(2005)
SHVETS, IGOR; ARORA, SUNIL KUMAR
Achomaireacht:
We have explored the possibility of ferromagnetic semiconducting property in the epitaxial thin films of LaFe1?xNixO3 x=0.3, 0.4, and 0.5 grown on 001 oriented LaAlO3 substrate. We observe that substitution of Ni in the series leads to the increase in conductivity of the samples with conduction being controlled by the disorder-induced localization of charge carriers. All these samples show ferromagnetic behavior at room temperature while their magnetization decreases with increase in Ni concentration in the composition. The results have been explained on the basis of the close interplay between the electrical and magnetic properties.
http://hdl.handle.net/2262/40393
Marcáilte
Marcáil
Chemical bonding in copper-based transparent conducting oxides: CuMO(2) (M = In, Ga, Sc)
(2011)
SCANLON, DAVID; ALLEN, JEREMY; WATSON, GRAEME WILLIAM; GODINHO, KATHERINE GITANJALI
Chemical bonding in copper-based transparent conducting oxides: CuMO(2) (M = In, Ga, Sc)
(2011)
SCANLON, DAVID; ALLEN, JEREMY; WATSON, GRAEME WILLIAM; GODINHO, KATHERINE GITANJALI
Achomaireacht:
The geometry and electronic structure of copper-based p-type delafossite transparent conducting oxides, CuMO(2) (M = In, Ga, Sc), are studied using the generalized gradient approximation (GGA) corrected for on-site Coulomb interactions (GGA + U). The bonding and valence band compositions of these materials are investigated, and the origins of changes in the valence band features between group 3 and group 13 cations are discussed. Analysis of the effective masses at the valence and conduction band edge explains the experimentally reported conductivity trends.
http://hdl.handle.net/2262/59411
Marcáilte
Marcáil
Microtexture of magnetite thin films of (001) and (111) orientations on MgO substrates studied by electron-backscatter diffraction
(2008)
MURPHY, SHANE; ARORA, SUNIL KUMAR; SHVETS, IGOR
Microtexture of magnetite thin films of (001) and (111) orientations on MgO substrates studied by electron-backscatter diffraction
(2008)
MURPHY, SHANE; ARORA, SUNIL KUMAR; SHVETS, IGOR
Achomaireacht:
The grain orientation of (001)- and (111)-oriented magnetite thin films grown on MgO substrates (film thickness of 100?400?nm) is analyzed by means of the electron-backscatter diffraction (EBSD) technique. The (001) surface after a short annealing in air (1?min, 250??C) is characterized by the presence of tiny (diameter of 100?200?nm) misoriented islands, which have an influence on the antiferromagnetic coupling within the film. In the (111)-oriented films, such defects are found to be absent, and the films show a very homogeneous surface. The achieved spatial resolution enables further a cross-section analysis of a 400-nm-thick film with (001) orientation, even close to the interface MgO-magnetite.
http://hdl.handle.net/2262/40322
Marcáilte
Marcáil
Structural and transport properties of Bi-substituted Co2MnO4
(2009)
ARORA, SUNIL KUMAR; SHVETS, IGOR
Structural and transport properties of Bi-substituted Co2MnO4
(2009)
ARORA, SUNIL KUMAR; SHVETS, IGOR
Achomaireacht:
We report the structural and transport properties of the Bi-substituted Co2MnO4 multiferroic materials. Samples synthesized using the solid state reaction route with the composition BixCo2?xMnO4 (<0x<0.3) exhibit a single phase behavior with a cubic spinel structure (space group Fd3m). The lattice parameter was found to increase with the Bi substitution. The dc-conductivity studies reveal that all the samples possess a semiconducting behavior. The resistivity was found to decrease with the increase in the Bi substitution. The dc- as well as ac-conductivity data were analyzed in the light of various conduction models. The dc-conductivity data are explained using the variable range hopping model. The ac conductivity calculated from the dielectric data as a function of temperature and frequency demonstrates the cross over from small polaron tunneling to correlated barrier hopping type conduction in these materials.
http://hdl.handle.net/2262/40472
Marcáilte
Marcáil
Double pulse ultrafast laser ablation of nickel in vacuum
(2009)
LUNNEY, JAMES GERARD
Double pulse ultrafast laser ablation of nickel in vacuum
(2009)
LUNNEY, JAMES GERARD
Achomaireacht:
peer-reviewed
We have studied ultrafast laser ablation of nickel using a pair of identical #2;250 fs 527 nm laser pulses separated by #2;1 to #2;1000 ps. Scanning white light interferometry was used to measure the ablated volume, and an ion probe was used to measure the angular distribution of the ablation plasma plume and the total ion emission. As the delay of the second pulse increased from #2;10 to 100 ps the ablated volume decreased by more than a factor of 2; indeed it falls to a value below the single pulse case. Conversely, it is found that the ion yield is sharply increased in this delay regime. It seems that both these features can be explained by the interaction of the second laser pulse with the ablated material produced by the first pulse.
http://hdl.handle.net/2262/31587
Marcáilte
Marcáil
Investigation of the physical mechanisms of shear-force imaging
(1996)
SHVETS, IGOR
Investigation of the physical mechanisms of shear-force imaging
(1996)
SHVETS, IGOR
Achomaireacht:
It is shown that shear-force imaging, as is commonly used for distance regulation in scanning near-field optical microscopy, is not a reliable technique for accurate topographic measurements. This is because different materials experience different shear-force damping. Results of the shear-force damping characteristics are presented for a number of different materials, and some consequences of the different dampings for different materials are demonstrated. It is also shown that there are at least two distinct shear force damping mechanisms. Results of imaging small conducting islands on a glass substrate show that the damping characteristics depend on the islands' size.
http://hdl.handle.net/2262/40476
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